公开(公告)号：US20050009356A1

公开(公告)日：2005-01-13

申请号：US10843508

申请日：2004-05-12

申请人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Akihiro Kojima ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831

摘要： A method of manufacturing a semiconductor device according to an aspect of the present invention includes: forming a low-k dielectric film above a semiconductor substrate; forming a resist pattern above the low-k dielectric film; etching the low-k dielectric film using the resist pattern as a mask; and stripping the resist pattern by plasma processing using ammonium ions.

摘要翻译： 根据本发明的一个方面的制造半导体器件的方法包括：在半导体衬底上形成低k电介质膜; 在低k电介质膜上形成抗蚀剂图案; 使用抗蚀剂图案作为掩模蚀刻低k电介质膜; 并通过使用铵离子的等离子体处理剥离抗蚀剂图案。

公开(公告)号：US07251049B2

公开(公告)日：2007-07-31

申请号：US10288333

申请日：2002-11-06

申请人： Kazunori Kurokawa ,  Kouichi Kawahara ,  Yoshihiro Ohshima ,  Yasuaki Mitobe ,  Junko Ohuchi ,  Takanori Okuoka

发明人： Kazunori Kurokawa ,  Kouichi Kawahara ,  Yoshihiro Ohshima ,  Yasuaki Mitobe ,  Junko Ohuchi ,  Takanori Okuoka

IPC分类号： G06F3/12 ,  G06F15/00

CPC分类号： G06K15/02

摘要： When image synthesis using form data, for which a pass code has been set, or merge data, for which a password has been set, is completed, the synthesized data is encoded and held. Thereafter, a client terminal is notified by e-mail that image synthesis has been completed. Thereafter, when a request for output is inputted, collation of passwords is carried out. If the passwords match, decoding and printing-out of encoded synthesized data, or transmission of the encoded synthesized data is carried out.

摘要翻译： 当使用已经设置了密码的形式数据的图像合成或已设置密码的合并数据完成时，对合成数据进行编码和保持。 此后，通过电子邮件通知客户终端图像合成已经完成。 此后，当输入输出请求时，执行密码的核对。 如果密码匹配，编码合成数据的解码和打印，或编码合成数据的传输。

公开(公告)号：US20050233255A1

公开(公告)日：2005-10-20

申请号：US11138216

申请日：2005-05-27

申请人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

IPC分类号： H01L21/027 ,  G03F7/11 ,  H01L21/308 ,  G03C5/00

CPC分类号： G03F7/11 ,  H01L21/0274 ,  H01L21/3081

摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US07198886B2

公开(公告)日：2007-04-03

申请号：US11138216

申请日：2005-05-27

申请人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

IPC分类号： G03F7/30

CPC分类号： G03F7/11 ,  H01L21/0274 ,  H01L21/3081

摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。

公开(公告)号：US06846750B1

公开(公告)日：2005-01-25

申请号：US09604724

申请日：2000-06-28

申请人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

发明人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/30 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0331 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/76816 ,  H01L21/7682

摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。 根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。 另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。