发明授权
- 专利标题： Semiconductor display device and manufacturing method thereof
- 专利标题（中）： 半导体显示装置及其制造方法
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申请号： US10412687申请日： 2003-04-14
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公开(公告)号： US06911688B2公开(公告)日： 2005-06-28
- 发明人: Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
- 申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP2002-112151 20020415
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; G09F9/30 ; H01L21/312 ; H01L21/316 ; H01L21/318 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/13 ; H01L27/32 ; H01L29/49 ; H01L29/786 ; H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
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