发明授权
US06939725B2 Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film
失效
制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法
- 专利标题： Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film
- 专利标题（中）： 制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法
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申请号： US10769808申请日： 2004-02-03
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公开(公告)号： US06939725B2公开(公告)日： 2005-09-06
- 发明人: Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
- 申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon Peabody LLP
- 代理商 Donald R. Studebaker
- 优先权： JP2000-109168 20000411; JP2000-337592 20001106
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; C23C16/40 ; H01L21/02 ; H01L21/316 ; H01L21/318 ; H01L21/768 ; H01L21/822 ; H01L21/8234 ; H01L21/8242 ; H01L21/8246 ; H01L27/04 ; H01L27/06 ; H01L27/105 ; H01L27/108 ; H01L21/00 ; H01L29/76
摘要：
A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
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