发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11617517申请日： 2006-12-28
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公开(公告)号： US07439578B2公开(公告)日： 2008-10-21
- 发明人: Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
- 申请人： Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2005-376788 20051228; JP2006-083269 20060324
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/06
摘要：
A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
公开/授权文献
- US20070166925A1 SEMICONDUCTOR DEVICE 公开/授权日：2007-07-19
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