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公开(公告)号：US20070166925A1
公开(公告)日：2007-07-19
申请号：US11617517
申请日：2006-12-28
申请人： Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
发明人： Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/7809 , H01L21/743 , H01L21/823487 , H01L27/088 , H01L29/0653 , H01L29/0696 , H01L29/41766 , H01L29/4236 , H01L29/66734 , H01L29/781
摘要： A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
摘要翻译： 半导体器件包括在半导体衬底的表面中形成的沟槽。 导体嵌入在沟槽中。 导电层被布置成与半导体衬底的表面上的沟槽相邻。 包括由导体和导电层之一提供的源和由导体和导电层中的另一个提供的漏极的半导体元件形成在半导体元件形成区域中。 在整个半导体元件形成区域的半导体衬底内嵌有平面布线层，并与导体连接。
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公开(公告)号：US07439578B2
公开(公告)日：2008-10-21
申请号：US11617517
申请日：2006-12-28
申请人： Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
发明人： Yasuhiro Takeda , Mitsuaki Morigami , Satoru Shimada , Kazuhiro Yoshitake , Shuichi Kikuchi , Seiji Otake , Toshiyuki Ohkoda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/06
CPC分类号： H01L29/7809 , H01L21/743 , H01L21/823487 , H01L27/088 , H01L29/0653 , H01L29/0696 , H01L29/41766 , H01L29/4236 , H01L29/66734 , H01L29/781
摘要： A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
摘要翻译： 半导体器件包括形成在半导体衬底的表面中的沟槽。 导体嵌入在沟槽中。 导电层被布置成与半导体衬底的表面上的沟槽相邻。 包括由导体和导电层之一提供的源和由导体和导电层中的另一个提供的漏极的半导体元件形成在半导体元件形成区中。 在整个半导体元件形成区域的半导体衬底内嵌有平面布线层，并与导体连接。
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公开(公告)号：US09252301B2
公开(公告)日：2016-02-02
申请号：US13594201
申请日：2012-08-24
申请人： Mitsuaki Morigami , Yuji Hishida , Daisuke Ide , Hitoshi Sakata , Takahiro Mishima , Hiroyuki Mori , Masato Shigematsu
发明人： Mitsuaki Morigami , Yuji Hishida , Daisuke Ide , Hitoshi Sakata , Takahiro Mishima , Hiroyuki Mori , Masato Shigematsu
IPC分类号： H01L31/068 , H01L31/0224 , H01L31/18 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1884 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.
摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。
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公开(公告)号：US07851917B2
公开(公告)日：2010-12-14
申请号：US12147122
申请日：2008-06-26
申请人： Tomio Yamashita , Mitsuaki Morigami
发明人： Tomio Yamashita , Mitsuaki Morigami
CPC分类号： H01L23/5226 , H01L21/76816 , H01L21/76877 , H01L23/53219 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.
摘要翻译： 布线结构包括第一布线，具有第一开口的第一层间电介质膜，在与第一开口对应的区域上形成有第一凹部的第二布线，具有第二开口的第二层间绝缘膜和第三布线 形成为覆盖第二层间电介质膜，其中第二开口的内侧表面布置在与第一凹部对应的区域上，并且形成为使得上端附近的部分的开口宽度从 下部朝向上部。
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公开(公告)号：US5326672A
公开(公告)日：1994-07-05
申请号：US964715
申请日：1992-10-22
CPC分类号： G03F7/30
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译： 根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力， 冲洗液在冲洗的临界条件下干燥，以免引起表面张力。 因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。 另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。 通过提供这种效果，产品的产量增加。 此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源
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公开(公告)号：US10181540B2
公开(公告)日：2019-01-15
申请号：US13557255
申请日：2012-07-25
申请人： Daisuke Ide , Takahiro Mishima , Masato Shigematsu , Toshiaki Baba , Hiroyuki Mori , Mitsuaki Morigami , Yuji Hishida , Hitoshi Sakata , Ryo Goto
发明人： Daisuke Ide , Takahiro Mishima , Masato Shigematsu , Toshiaki Baba , Hiroyuki Mori , Mitsuaki Morigami , Yuji Hishida , Hitoshi Sakata , Ryo Goto
IPC分类号： H01L31/18 , H01L31/078 , H01L31/0224 , H01L31/0352 , H01L31/0747
摘要： An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.
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公开(公告)号：US20090001590A1
公开(公告)日：2009-01-01
申请号：US12147122
申请日：2008-06-26
申请人： Tomio Yamashita , Mitsuaki Morigami
发明人： Tomio Yamashita , Mitsuaki Morigami
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76816 , H01L21/76877 , H01L23/53219 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.
摘要翻译： 布线结构包括第一布线，具有第一开口的第一层间电介质膜，在与第一开口对应的区域上形成有第一凹部的第二布线，具有第二开口的第二层间绝缘膜和第三布线 形成为覆盖第二层间电介质膜，其中第二开口的内侧表面布置在与第一凹部对应的区域上，并且形成为使得上端附近的部分的开口宽度从 下部朝向上部。
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公开(公告)号：US5374502A
公开(公告)日：1994-12-20
申请号：US083131
申请日：1993-06-25
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yieldings of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译： 根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力， 冲洗液在冲洗的临界条件下干燥，以免引起表面张力。 因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。 另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。 通过提供这样的效果，产品的产量增加。 此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源
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