Invention Grant
- Patent Title: Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
- Patent Title (中): 光检测器包括单片集成跨阻放大器和评估电子器件,以及生产方法
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Application No.: US10596035Application Date: 2004-12-06
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Publication No.: US07491925B2Publication Date: 2009-02-17
- Inventor: Konrad Bach , Alexander Hoelke , Uwe Eckoldt , Wolfgang Einbrodt , Karl-Ulrich Stahl
- Applicant: Konrad Bach , Alexander Hoelke , Uwe Eckoldt , Wolfgang Einbrodt , Karl-Ulrich Stahl
- Applicant Address: DE Erfurt DE Erfurt
- Assignee: X-FAB Semiconductor Foundries, AG,Melexis GmbH
- Current Assignee: X-FAB Semiconductor Foundries, AG,Melexis GmbH
- Current Assignee Address: DE Erfurt DE Erfurt
- Agency: Duane Morris LLP
- Priority: DE10357135 20031206
- International Application: PCT/DE2004/002672 WO 20041206
- International Announcement: WO2005/057667 WO 20050623
- Main IPC: H03F3/08
- IPC: H03F3/08

Abstract:
The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
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