发明授权
US07524750B2 Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
失效
集成过程调制（IPM）是HDP-CVD填缝的新解决方案
- 专利标题： Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
- 专利标题（中）： 集成过程调制（IPM）是HDP-CVD填缝的新解决方案
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申请号： US11553772申请日： 2006-10-27
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公开(公告)号： US07524750B2公开(公告)日： 2009-04-28
- 发明人: Srinivas D. Nemani , Young S. Lee , Ellie Y. Yieh , Anchuan Wang , Jason Thomas Bloking , Lung-Tien Han
- 申请人： Srinivas D. Nemani , Young S. Lee , Ellie Y. Yieh , Anchuan Wang , Jason Thomas Bloking , Lung-Tien Han
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.