发明授权
- 专利标题： Plasma process device and plasma process method
- 专利标题（中）： 等离子体工艺装置和等离子体处理方法
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申请号： US11656379申请日： 2007-01-23
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公开(公告)号： US08394231B2公开(公告)日： 2013-03-12
- 发明人: Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
- 申请人： Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Crowell & Moring LLP
- 优先权： JP2001-13572 20010122; JP2001-13574 20010122; JP2001-239720 20010807
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; H01L21/306 ; C23C16/00 ; H05H1/24 ; H01J7/24
摘要：
That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
公开/授权文献
- US20070131171A1 Plasma process device and plasma process method 公开/授权日：2007-06-14
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