公开(公告)号：US08394231B2

公开(公告)日：2013-03-12

申请号：US11656379

申请日：2007-01-23

申请人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

发明人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H05H1/24 ,  H01J7/24

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541

摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

摘要翻译： 与基座10相对的电极板20的表面具有突出形状。 电极板20在突起20a处嵌合在屏蔽环26的开口26a中。 此时，突起20a的厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。 突起20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

公开(公告)号：US20070131171A1

公开(公告)日：2007-06-14

申请号：US11656379

申请日：2007-01-23

申请人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

发明人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

IPC分类号： C23C16/00

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541

摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

摘要翻译： 与基座10相对的电极板20的表面具有突起形状。 电极板20在突出部20a安装在屏蔽环26的开口26a中。 此时，突出部20a的芯片厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。 突起部20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

公开(公告)号：US06949829B2

公开(公告)日：2005-09-27

申请号：US10380038

申请日：2001-09-11

申请人： Takashi Akahori ,  Gishi Chung ,  Kohei Kawamura

发明人： Takashi Akahori ,  Gishi Chung ,  Kohei Kawamura

IPC分类号： H01L21/314 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

摘要翻译： 作为蚀刻停止件的阻挡层19形成有第二槽14a和接触孔13a。 铜被埋在第二槽14a和接触孔13a内，由此形成插头层22和覆盖的布线层21，该布线层21经由插塞层22连接到下面的布线层17。 阻挡层19由Si，C和N组成。 第一和第二盖层18和23也由Si，C和N组成。

公开(公告)号：US07601402B2

公开(公告)日：2009-10-13

申请号：US10703092

申请日：2003-11-07

申请人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

发明人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

IPC分类号： H05H1/24

CPC分类号： C23C16/45523 ,  C23C16/401 ,  C23C16/56 ,  F27B17/0025 ,  H01J37/32082 ,  H01L21/67161 ,  H01L21/67207

摘要： A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

摘要翻译： 形成多孔绝缘膜的方法包括绝缘膜形成步骤和孔形成步骤。 在绝缘膜形成步骤中，有机硅氧烷基化合物和具有极性基团的有机化合物的等离子体处理形成具有硅氧烷结构的绝缘膜。 具有极性基团的有机化合物的分子包含在该硅氧烷结构内。 在孔形成步骤期间，激发气体除去具有极性基团的有机化合物的分子，以在绝缘膜中提供孔。 根据该方法，可以得到厚度方向均一地形成有规定厚度的绝缘膜和孔。

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

公开(公告)号：US20070160757A1

公开(公告)日：2007-07-12

申请号：US11717183

申请日：2007-03-13

申请人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

发明人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4412

摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

摘要翻译： 在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。 供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。 此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。 当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。 通过设置在供给系统和排气系统中的每一个的截止阀进行切换。

公开(公告)号：US07717061B2

公开(公告)日：2010-05-18

申请号：US11232943

申请日：2005-09-23

申请人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  F16K11/065 ,  F16K11/085 ,  F16K11/074 ,  F16K3/08 ,  F16K47/04

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

摘要翻译： 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：US20060027167A1

公开(公告)日：2006-02-09

申请号：US11232943

申请日：2005-09-23

申请人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

发明人： Tadahiro Ishizaka ,  Naoki Yoshii ,  Kohei Kawamura ,  Yukio Fukuda ,  Takashi Shigeoka ,  Yasuhiko Kojima ,  Yasuhiro Oshima ,  Junichi Arami ,  Atsushi Gomi

IPC分类号： C23C16/00

CPC分类号： C23C16/45542 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45561 ,  Y10T137/86558 ,  Y10T137/86566 ,  Y10T137/86638 ,  Y10T137/86726 ,  Y10T137/86743 ,  Y10T137/86751 ,  Y10T137/86871

摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

摘要翻译： 公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。 励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。 在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。 切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

公开(公告)号：US08197913B2

公开(公告)日：2012-06-12

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US20100032844A1

公开(公告)日：2010-02-11

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/48

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。