公开(公告)号：US09293417B2

公开(公告)日：2016-03-22

申请号：US13349991

申请日：2012-01-13

申请人： Hidenori Miyoshi ,  Masamichi Hara

发明人： Hidenori Miyoshi ,  Masamichi Hara

IPC分类号： B05D5/12 ,  H01L23/532 ,  C23C16/16 ,  C23C16/18 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/04 ,  C23C16/042 ,  C23C16/16 ,  C23C16/18 ,  C23C16/405 ,  H01L21/28556 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound.

摘要翻译： 公开了一种膜形成方法，其中在具有暴露了绝缘膜和铜布线的表面的基板上形成含锰膜。 成膜方法包括通过使用锰化合物的CVD法在铜布线上形成含锰膜。

公开(公告)号：US08865590B2

公开(公告)日：2014-10-21

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/3105 ,  C23C16/40 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08765221B2

公开(公告)日：2014-07-01

申请号：US13616308

申请日：2012-09-14

申请人： Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Hidenori Miyoshi ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： C23C16/40

CPC分类号： H01L21/76814 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.

摘要翻译： 成膜方法包括在成膜装置的处理室内配置有形成有绝缘膜的晶片的步骤，以及将含有硅原子的复合气体和供给OH基团的气体供给到表面改性工序 处理室，使得Si-OH基形成在绝缘膜的表面上。 成膜方法还包括将含有含锰材料的成膜气体供给到处理室中的成膜步骤，使得在Si-OH基团上具有的绝缘膜的表面上形成含锰膜 通过CVD法形成。

公开(公告)号：US20120068603A1

公开(公告)日：2012-03-22

申请号：US13224879

申请日：2011-09-02

申请人： Hitoshi ITOH ,  Hidenori MIYOSHI ,  Masaru HORI ,  Hirotaka TOYODA ,  Makoto SEKINE

发明人： Hitoshi ITOH ,  Hidenori MIYOSHI ,  Masaru HORI ,  Hirotaka TOYODA ,  Makoto SEKINE

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H2001/4622

摘要： An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.

摘要翻译： 一种用于产生等离子体的装置，包括：微波发生器，被配置为产生微波; 与微波发生器连接的波导，其中波导在微波的行进方向上伸长，并且具有在与行进方向垂直的方向上具有矩形截面的中空形状; 气体供给器，其连接到波导并将处理气体馈送到波导中; 以及天线单元，其是波导的一部分并将由微波产生的等离子体放电到外部，其中天线单元具有形成在构成天线单元的部分中的短边的壁上的一个或多个槽， 通过微波在大气压下在槽中供给到波导管中的工艺气体，并将等离子体从槽中排出。

公开(公告)号：US08029856B2

公开(公告)日：2011-10-04

申请号：US11747647

申请日：2007-05-11

申请人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

发明人： Hidenori Miyoshi ,  Isao Gunji ,  Hitoshi Itoh

IPC分类号： B05D3/02

CPC分类号： C23C16/4488 ,  C23C16/06

摘要： A film formation method is arranged to react carboxylic acid with an oxygen-containing metal compound to produce carboxylate salt gas of a metal of the metal compound. The method then supplies the carboxylate salt gas of the metal onto a substrate. The method applies energy to the substrate to decompose the carboxylate salt of the metal supplied onto the substrate, thereby forming a metal film.

摘要翻译： 布置成膜方法使羧酸与含氧金属化合物反应，生成金属化合物的金属的羧酸盐气体。 该方法然后将金属的羧酸盐气体提供到基底上。 该方法对基材施加能量以分解供应到基材上的金属的羧酸盐，从而形成金属膜。

公开(公告)号：US20100316799A1

公开(公告)日：2010-12-16

申请号：US12811185

申请日：2008-12-25

申请人： Isao Gunji ,  Hidenori Miyoshi ,  Hitoshi Itoh

发明人： Isao Gunji ,  Hidenori Miyoshi ,  Hitoshi Itoh

IPC分类号： C23C16/18

CPC分类号： C23C16/18 ,  C23C16/4488 ,  C23C18/08 ,  H01L21/28556 ,  H01L21/288

摘要： Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.

摘要翻译： 公开了一种成膜方法，其包括以下步骤：通过使二价羧酸金属盐与羧酸反应制备单价羧酸金属盐气体; 将一价羧酸金属盐气体供给到基板上以积累单价羧酸金属盐膜; 并通过向形成有一元羧酸金属盐膜的基板供给能量来分解单价羧酸金属盐膜，以形成金属膜。

公开(公告)号：US07772130B2

公开(公告)日：2010-08-10

申请号：US10580824

申请日：2004-11-29

申请人： Hidenori Miyoshi ,  Kazuo Komura

发明人： Hidenori Miyoshi ,  Kazuo Komura

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： In a CVD apparatus (111), a reforming process is performed on a porous low dielectric constant film containing silicon, by heating a semiconductor wafer W by a heater, introducing 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS), and performing heat treatment without applying a high frequency voltage. Then, in the same CVD apparatus (111), an insulation film having high density and hardness is formed on the porous low dielectric constant film, by heating the semiconductor wafer W, introducing TMCTS, and generating a plasma of a gas containing TMCTS while applying a high frequency voltage.

摘要翻译： 在CVD装置（111）中，通过加热器加热半导体晶片W，引入1,3,5,7-四甲基环四硅氧烷（TMCTS）并进行热处理，对含有硅的多孔低介电常数膜进行重整处理 处理而不施加高频电压。 然后，在同一CVD装置（111）中，通过加热半导体晶片W，引入TMCTS，并在施加含有TMCTS的气体的等离子体的同时，在多孔低介电常数膜上形成高密度和硬度的绝缘膜 高频电压。

公开(公告)号：US20100108108A1

公开(公告)日：2010-05-06

申请号：US12532480

申请日：2008-03-14

申请人： Kazuichi Hayashi ,  Hidenori Miyoshi

发明人： Kazuichi Hayashi ,  Hidenori Miyoshi

IPC分类号： B08B3/00

CPC分类号： H01L21/68735 ,  H01L21/02063 ,  H01L21/67069 ,  H01L21/68757

摘要： A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered.

摘要翻译： 基板安装台包括其顶表面和侧表面被上盖部件覆盖的安装台主体。 对位于上盖部件的上表面的基板安装区域外侧的基板周边部进行表面处理，使得基板周围区域比基板安装区域更平滑。 当晶片安装在其上时，基板安装区域被晶片覆盖。 因此，例如，从基板除去金属氧化物膜时产生的金属成分不容易附着在安装台上，并且如果粘附则容易除去。

公开(公告)号：US20090075475A1

公开(公告)日：2009-03-19

申请号：US12282654

申请日：2007-03-13

申请人： Hidenori Miyoshi

发明人： Hidenori Miyoshi

IPC分类号： H01L21/768

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/67109 ,  H01L21/76814 ,  H01L21/76828

摘要： Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table disposed therein; and gas supply unit 102 for supplying a processing gas into the processing chamber 101. The processing gas includes organic acid metal complex or organic acid metal salt.

摘要翻译： 基板处理装置100包括不仅支撑目标基板W而且还对目标基板W进行加热的支撑台103， 具有设置在其中的支撑台的处理室101; 以及用于将处理气体供给到处理室101中的气体供给单元102.处理气体包括有机酸金属络合物或有机酸金属盐。

公开(公告)号：US08610353B2

公开(公告)日：2013-12-17

申请号：US13224879

申请日：2011-09-02

申请人： Hitoshi Itoh ,  Hidenori Miyoshi ,  Masaru Hori ,  Hirotaka Toyoda ,  Makoto Sekine

发明人： Hitoshi Itoh ,  Hidenori Miyoshi ,  Masaru Hori ,  Hirotaka Toyoda ,  Makoto Sekine

IPC分类号： H01J7/24 ,  H05B31/26

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H2001/4622

摘要： An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.

摘要翻译： 一种用于产生等离子体的装置，包括：微波发生器，被配置为产生微波; 与微波发生器连接的波导，其中波导在微波的行进方向上伸长，并且具有在与行进方向垂直的方向上具有矩形截面的中空形状; 气体供给器，其连接到波导并将处理气体馈送到波导中; 以及天线单元，其是波导的一部分并将由微波产生的等离子体放电到外部，其中天线单元具有形成在构成天线单元的部分中的短边的壁上的一个或多个槽， 通过微波在大气压下在槽中供给到波导管中的工艺气体，并将等离子体从槽中排出。