Abstract:
That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
Abstract:
Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.
Abstract:
That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
Abstract:
When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.
Abstract:
In a high pressure processing method for removing an unnecessary substrate on the surface of the surface of a workpiece by bringing it into contact with supercritical carbon dioxide and additives in a high-pressure chamber, removing the unnecessary substance on the workpiece, first rinsing and second rinsing are performed under a substantially same pressure with continuous flowing of supercritical carbon dioxide.
Abstract:
Mixing baths 6A and 6B which temporarily hold chemical agents A and B respectively are disposed. The mixing baths 6A and 6B are each connected with a high-pressure fluid supplying unit 2. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under pressure from the high-pressure fluid supplying unit 2 to the mixing bath 6A which already holds the chemical agent A, whereby the chemical agent A dissolves in SCF flowing into the mixing bath 6A and the mixture of the chemical agent A and SCF (processing fluid) is created. As a high-pressure valve (processing fluid introducing valve) 39 is opened, the processing fluid is sent into a pressure vessel 1. This achieves a predetermined surface treatment of a substrate which has been set inside the pressure vessel 1, using the processing fluid.
Abstract:
A high-pressure processing apparatus for removing unnecessary matters on objects to be processed by bringing a high-pressure fluid and a chemical liquid other than the high-pressure fluid into contact with the objects to be processed in a pressurized state is provided with a plurality of high-pressure processing chambers, a common high-pressure fluid supply unit for supplying the high-pressure fluid to each one of the high-pressure processing chambers, a common chemical liquid supply unit for supplying the chemical liquid to the each high-pressure processing chambers, and a separating unit for separating gaseous components from a mixture of the high-pressure fluid and the chemical liquid discharged from the high-pressure processing chambers after the objects are processed.Thus, a high-pressure processing apparatus which has such a compact construction as to be partly installable in a clean room and can stably perform a high-pressure processing can be provided.
Abstract:
Provided is a cleaning apparatus for cleaning an object to be treated by contacting the object to be treated with a high pressure fluid of a cleaning composition containing a cleaning component as an essential ingredient. The cleaning apparatus includes high pressure fluid supplying means for supplying the high pressure fluid of the cleaning composition, a high pressure washing vessel for removing unnecessary materials deposited on the object to be treated by contacting the object to be treated with the high pressure fluid of the cleaning composition therein, a storing vessel for storing a waste high pressure fluid of the cleaning composition carrying the unnecessary materials therein, and a sealed structure for sealably housing the high pressure fluid supplying means, the high pressure washing vessel, and the storing vessel therein. The sealed structure has first exhaust means for exhausting the gas remaining in the sealed structure therefrom.
Abstract:
The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.
Abstract:
A method of integrally molding a member to be molded onto a portion of a rigid member, which method is applied to manufacture of a connecting rod used in a crank device of a wiper system in a motor vehicle, for example. In this method of molding, a portion to be positioned is formed in the rigid member, a portion of the rigid member is inserted into a cavity for molding the member to be molded in such a manner that the portion to be positioned is exposed in the cavity, positioning members linearly movably provided in this cavity are engaged with this portion to be positioned to effect positioning, the positioning members are retracted to the outside of the portion to be positioned after the positioning, and thereafter, a molding material is poured into the cavity to mold the member to be molded. The rigid member has a mounting hole integrally molded therein with the resinous member to be molded, slits are provided on the inner peripheral surface of the member to be molded, and the mounting hole formed such that the inner diameters of portions of the mounting hole as opposed to said slits are decreased.