Invention Grant
- Patent Title: Method of reading and writing nonvolatile memory cells
- Patent Title (中): 读写非易失性存储单元的方法
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Application No.: US13786202Application Date: 2013-03-05
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Publication No.: US08830761B2Publication Date: 2014-09-09
- Inventor: Francesco La Rosa , Olivier Pizzuto , Stephan Niel , Philippe Boivin , Pascal Fornara , Laurent Lopez , Arnaud Regnier
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group PLLC
- Priority: FR1251969 20120305
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/24 ; G11C16/34 ; G11C16/14 ; G11C16/08 ; H01L29/423 ; H01L29/788 ; H01L27/115 ; G11C16/04 ; G11C11/56 ; G11C8/12

Abstract:
The disclosure relates to a method of reading and writing memory cells, each including a charge accumulation transistor in series with selection transistor, including applying a selection voltage to a gate of the selection transistor of the memory cell; applying a read voltage to a control gate of the charge accumulation transistor of the memory cell; applying the selection voltage to a gate of the selection transistor of a second memory cell coupled to the same bitline; and applying an inhibition voltage to a control gate of the charge accumulation transistor of the second memory cell, to maintain the transistor in a blocked state.
Public/Granted literature
- US20130229875A1 METHOD OF READING AND WRITING NONVOLATILE MEMORY CELLS Public/Granted day:2013-09-05
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