发明授权
- 专利标题： Method of forming copper wiring and method and system for forming copper film
- 专利标题（中）： 形成铜线的方法及铜膜形成方法及系统
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申请号： US13359138申请日： 2012-01-26
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公开(公告)号： US08859422B2公开(公告)日： 2014-10-14
- 发明人: Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
- 申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2011-015663 20110127; JP2011-015664 20110127; JP2011-077499 20110331; JP2011-251520 20111117; JP2011-287693 20111228
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
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