Invention Grant
US08861276B2 Nonvolatile memory device, memory system comprising same, and method of operating same
有权
非易失性存储器件，包括其的存储器系统及其操作方法
- Patent Title: Nonvolatile memory device, memory system comprising same, and method of operating same
- Patent Title (中): 非易失性存储器件，包括其的存储器系统及其操作方法
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Application No.: US13527641Application Date: 2012-06-20
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Publication No.: US08861276B2Publication Date: 2014-10-14
- Inventor: Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
- Applicant: Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0060289 20110621; KR10-2012-0000592 20120103
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C11/56
Abstract:
A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
Public/Granted literature
- US20120327711A1 NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF OPERATING SAME Public/Granted day:2012-12-27
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