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1.发明授权Nonvolatile memory device, memory system comprising same, and method of operating same 有权非易失性存储器件，包括其的存储器系统及其操作方法公开(公告)号：US08861276B2
公开(公告)日：2014-10-14
申请号：US13527641
申请日：2012-06-20
Applicant: Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
Inventor： Dongkyo Shim , Jaeyong Jeong , Ju Seok Lee , Ohsuk Kwon , Kitae Park , Hyunjun Yoon
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483
Abstract: A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
Abstract translation: 一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作 使用所选择的读取电压的非易失性存储器件。
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2.发明申请NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM COMPRISING SAME, AND METHOD OF OPERATING SAME 有权非易失性存储器件，包含其的存储器系统及其操作方法公开(公告)号：US20120327711A1
公开(公告)日：2012-12-27
申请号：US13527641
申请日：2012-06-20
Applicant: DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
Inventor： DONGKYO SHIM , JAEYONG JEONG , JU SEOK LEE , OHSUK KWON , KITAE PARK , HYUNJUN YOON
IPC: G11C16/26
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/0483
Abstract: A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.
Abstract translation: 一种操作非易失性存储器件的方法包括从存储器控制器接收读取命令，确定非易失性存储器件的读取模式，基于读取模式选择读取电压，以及对所选择的页面的存储器单元执行读取操作 使用所选择的读取电压的非易失性存储器件。
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