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    Memory system comprising nonvolatile memory device and program method thereof
    4.
    发明授权
    Memory system comprising nonvolatile memory device and program method thereof 有权
    包括非易失性存储器件及其程序方法的存储器系统

    公开(公告)号：US09245630B2

    公开(公告)日：2016-01-26

    申请号：US14161886

    申请日：2014-01-23

    申请人： Donghun Kwak ,  Kitae Park

    发明人： Donghun Kwak ,  Kitae Park

    IPC分类号： G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/22

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/22

    摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.

    摘要翻译： 存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控​​制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。 在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数， 使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。

    Data storage system having multi-bit memory device and operating method thereof
    6.
    发明授权
    Data storage system having multi-bit memory device and operating method thereof 有权
    具有多位存储装置的数据存储系统及其操作方法

    公开(公告)号：US08976587B2

    公开(公告)日：2015-03-10

    申请号：US13737140

    申请日：2013-01-09

    申请人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    发明人： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

    IPC分类号： G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G11C14/00

    CPC分类号： G11C16/10 ,  G11C11/56 ,  G11C11/5628 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/26 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2211/5643

    摘要： The operating method of a data storage device includes storing data in a buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of a memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to a multi-bit memory device based on the determined program pattern.

    摘要翻译： 数据存储装置的操作方法包括根据外部请求将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是伴随存储器单元阵列的缓冲器程序操作的数据。 当存储在缓冲存储器中的数据是与缓冲器程序操作相关的数据时，该方法还包括确定是否需要对存储单元阵列的主程序操作，以及当需要存储单元阵列的主程序操作时， 存储单元阵列中的主程序操作的程序模式。 该方法还包括基于所确定的程序模式向存储器单元阵列发出用于主程序操作的一组命令到多位存储器件。

    MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF
    8.
    发明申请
    MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
    包含非易失性存储器件的存储器系统及其程序方法

    公开(公告)号：US20140219020A1

    公开(公告)日：2014-08-07

    申请号：US14161886

    申请日：2014-01-23

    申请人： DONGHUN KWAK ,  KITAE PARK

    发明人： DONGHUN KWAK ,  KITAE PARK

    IPC分类号： G11C16/10

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/22

    摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.

    摘要翻译： 存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控​​制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。 在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数， 使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。

    Methods for Programming Nonvolatile Memory Devices
    10.
    发明申请
    Methods for Programming Nonvolatile Memory Devices 有权
    非易失性存储器件编程方法

    公开(公告)号：US20120218828A1

    公开(公告)日：2012-08-30

    申请号：US13468312

    申请日：2012-05-10

    申请人： Hyun-Sil Oh ,  Kitae Park ,  Soonwook Hwang

    发明人： Hyun-Sil Oh ,  Kitae Park ,  Soonwook Hwang

    IPC分类号： G11C16/08

    CPC分类号： G11C16/10 ,  G11C16/0483

    摘要： Provided is a method for programming a nonvolatile memory device. The nonvolatile memory device includes a local word line to divide a memory cell string into a first area including a selected word line and a second area not including the selected word line. In the method, word lines of the first area are driven by a first pass voltage and word lines of the second area driven by a second pass voltage higher than the first pass voltage. A cell transistor corresponding to the local word line is turned off after the first pass voltage and the second pass voltage are applied. The selected word line is driven by a program voltage after the cell transistor is turned off.

    摘要翻译： 提供了一种用于对非易失性存储器件进行编程的方法。 非易失性存储器件包括用于将存储单元串划分成包括所选字线的第一区域和不包括所选字线的第二区域的本地字线。 在该方法中，第一区域的字线由第一通过电压和由比第一通过电压高的第二通过电压驱动的第二区域的字线驱动。 在施加第一通过电压和第二通过电压之后，对应于本地字线的单元晶体管截止。 在单元晶体管截止之后，所选字线由编程电压驱动。