Invention Grant
- Patent Title: Low temperature deposition of silicon-containing films
- Patent Title (中): 含硅薄膜的低温沉积
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Application No.: US13624190Application Date: 2012-09-21
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Publication No.: US08906455B2Publication Date: 2014-12-09
- Inventor: Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Hansong Cheng
- Applicant: Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Hansong Cheng
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agency: Rosaleen P. Morris-Oskanian
- Agent Lina Yang
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/02 ; H01L21/316 ; H01L21/318 ; C23C16/34 ; H01L21/314 ; C23C16/40 ; C23C16/455 ; C23C16/30
Abstract:
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
Public/Granted literature
- US20130189853A1 Low Temperature Deposition of Silicon-Containing Films Public/Granted day:2013-07-25
Information query
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