Invention Grant
- Patent Title: Method of forming a plurality of spaced features
- Patent Title (中): 形成多个间隔特征的方法
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Application No.: US13948050Application Date: 2013-07-22
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Publication No.: US08980752B2Publication Date: 2015-03-17
- Inventor: Farrell Good , Baosuo Zhou , Xiaolong Fang , Fatma Arzum Simsek-Ege
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/768 ; H01L21/033 ; H01L21/28 ; H01L21/3213 ; H01L27/115 ; H01L21/302
Abstract:
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask have at least two layers of different composition, with one of the layers of each of the individual features having a tensile intrinsic stress of at least 400.0 MPa. The individual features have a total tensile intrinsic stress greater than 0.0 MPa. The mask is used while etching into the underlying material to form a plurality of spaced features comprising the underlying material. Other implementations are disclosed.
Public/Granted literature
- US20130309858A1 Method of Forming a Plurality of Spaced Features Public/Granted day:2013-11-21
Information query
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