Corrugated interfaces for multilayered interconnects

Invention Grant

US09089080B2 Corrugated interfaces for multilayered interconnects 有权

Title translation: 多层互连的波纹接口

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Patent Title: Corrugated interfaces for multilayered interconnects
Patent Title (中): 多层互连的波纹接口
Application No.: US13912591

Application Date: 2013-06-07
Publication No.: US09089080B2

Publication Date: 2015-07-21
Inventor: Lawrence A. Clevenger , Timothy J. Dalton , Elbert E. Huang , Sampath Purushothaman , Carl J. Radens
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Catherine Ivers
Main IPC: H01L21/311
IPC: H01L21/311 ; H05K3/40 ; H01L21/033 ; H01L21/768 ; H01L23/532 ; H01B17/66

Corrugated interfaces for multilayered interconnects

Abstract:

Dielectric composite structures comprising interfaces possessing nanometer scale corrugated interfaces in interconnect stack provide enhances adhesion strength and interfacial fracture toughness. Composite structures further comprising corrugated adhesion promoter layers to further increase intrinsic interfacial adhesion are also described. Methods to form the nanometer scale corrugated interfaces for enabling these structures using self assembling polymer systems and pattern transfer process are also described.

Abstract(Chinese):

包含在互连叠层中具有纳米级波纹界面的界面的介电复合结构提供了增强的粘合强度和界面断裂韧性。还描述了进一步包含波纹粘合促进剂层以进一步增加本征界面粘合性的复合结构。还描述了使用自组装聚合物体系和图案转移方法形成纳米级波纹界面以实现这些结构的方法。

Public/Granted literature

US20130270224A1 CORRUGATED INTERFACES FOR MULTILAYERED INTERCONNECTS Public/Granted day:2013-10-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀