Invention Grant
- Patent Title: Method for forming copper wiring
- Patent Title (中): 铜线形成方法
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Application No.: US14136838Application Date: 2013-12-20
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Publication No.: US09101067B2Publication Date: 2015-08-04
- Inventor: Tadahiro Ishizaka , Toshio Hasegawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-277925 20121220
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H05K3/10 ; H05K3/14 ; H05K3/38 ; H05K3/46
Abstract:
In a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess which is formed in a substrate in a predetermined pattern, a barrier film formed of a TaAlN film is formed at least on the surface of the recess by thermal ALD or thermal CVD. Then a Cu film is formed to fill the recess with the Cu film. Further, the Cu wiring is formed in the recess by polishing the entire surface of the substrate by CMP.
Public/Granted literature
- US20140175046A1 METHOD FOR FORMING COPPER WIRING Public/Granted day:2014-06-26
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