Invention Grant
- Patent Title: Wafer edge conditioning for thinned wafers
- Patent Title (中): 用于薄晶片的晶圆边缘调节
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Application No.: US13053803Application Date: 2011-03-22
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Publication No.: US09105465B2Publication Date: 2015-08-11
- Inventor: Timothy Harrison Daubenspeck , Jeffrey P. Gambino , Christopher David Muzzy , Wolfgang Sauter , Timothy Dooling Sullivan
- Applicant: Timothy Harrison Daubenspeck , Jeffrey P. Gambino , Christopher David Muzzy , Wolfgang Sauter , Timothy Dooling Sullivan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent David A. Cain
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/02

Abstract:
The present invention relates to a method for minimizing breakage of wafers during or after a wafer thinning process. A method of forming a rounded edge to the portion of a wafer remaining after surface grinding process is provided. The method comprises providing a semiconductor wafer having an edge and forming a recess in the edge of the wafer using any suitable mechanical or chemical process. The method further comprises forming a substantially continuous curved shape for at least the edge of the wafer located above the recess. Advantageously, the shape of the wafer is formed prior to the backside grind process to prevent problems caused by the otherwise presence of a sharp edge during the backside grind process.
Public/Granted literature
- US20120241916A1 WAFER EDGE CONDITIONING FOR THINNED WAFERS Public/Granted day:2012-09-27
Information query
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