Method of forming semiconductor fins

Invention Grant

US09196499B2 Method of forming semiconductor fins 有权

Title translation: 形成半导体鳍片的方法

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Patent Title: Method of forming semiconductor fins
Patent Title (中): 形成半导体鳍片的方法
Application No.: US14225542

Application Date: 2014-03-26
Publication No.: US09196499B2

Publication Date: 2015-11-24
Inventor: Andy Chih-Hung Wei , Dae-han Choi , Dae Geun Yang , Xiang Hu , Mariappan Hariharaputhiran
Applicant: GLOBALFOUNDRIES Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Grand Cayman
Agency: Williams Morgan, P.C.
Main IPC: H01L21/475
IPC: H01L21/475 ; H01L21/308 ; H01L21/311 ; H01L21/306 ; H01L21/762 ; H01L29/66 ; H01L21/033 ; H01L21/8234

Abstract:

Embodiments of the present invention provide methods of removing fin portions from a finFET. At a starting point, a high-K dielectric layer is disposed on a substrate. A fin hardmask and lithography stack is deposited on the high-k dielectric. A fin hardmask is exposed, and a first portion of the fin hardmark is removed. The lithography stack is removed. A second portion of the fin hardmask is removed. Fins are formed. A gap fill dielectric is deposited and recessed.

Abstract(Chinese):

本发明的实施例提供了从finFET去除翅片部分的方法。在起始点，高K电介质层设置在基板上。翅片硬掩模和光刻叠层沉积在高k电介质上。翅片硬掩模被暴露，并且鳍状硬标记的第一部分被去除。去除光刻叠层。拆下散热片硬掩模的第二部分。鳍形成。间隙填充电介质被沉积并凹进。

Public/Granted literature

US20150279684A1 METHOD OF FORMING SEMICONDUCTOR FINS Public/Granted day:2015-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/475	.......应用掩膜的