Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14328720Application Date: 2014-07-11
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Publication No.: US09196699B1Publication Date: 2015-11-24
- Inventor: Chia-Fu Hsu , Chun-Mao Chiou , Shih-Chieh Hsu , Jian-Cun Ke , Chun-Lung Chen , Lung-En Kuo
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103121078A 20140618
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/51 ; H01L21/28 ; H01L29/66
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; depositing a liner on the gate structure and the substrate; and performing an etching process by injecting a gas comprising CH3F, O2, and He for forming a spacer adjacent to the gate structure.
Information query
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