Invention Grant
- Patent Title: High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods
- Patent Title (中): 高效光伏背接触太阳能电池结构及制造方法
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Application No.: US14629273Application Date: 2015-02-23
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Publication No.: US09196759B2Publication Date: 2015-11-24
- Inventor: Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , David Xuan-Qi Wang , Sean M. Seutter , Virendra V. Rana , Anthony Calcaterra , Emmanuel Van Kerschaver
- Applicant: SOLEXEL, INC.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/0216 ; H01L31/056

Abstract:
Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
Public/Granted literature
- US20150243814A1 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS Public/Granted day:2015-08-27
Information query
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