公开(公告)号：US20150061086A1

公开(公告)日：2015-03-05

申请号：US14195748

申请日：2014-03-03

Applicant: SOLEXEL, INC.

Inventor： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

IPC: H01L29/06 ,  H01L21/3065 ,  H01L31/0236 ,  H01L29/04

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.

Abstract translation: 具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。 一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111） 硅模板的晶体平面。

公开(公告)号：US20170372887A1

公开(公告)日：2017-12-28

申请号：US15156286

申请日：2016-05-16

Applicant: Solexel, Inc.

Inventor： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

IPC: H01L21/02 ,  F16L21/035

CPC classification number: H01L21/0243 ,  B81C1/00063 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0143 ,  F16L21/035 ,  H01L21/7806 ,  H01L21/7813 ,  H01L31/0352 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1896

Abstract: A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

公开(公告)号：US20150243814A1

公开(公告)日：2015-08-27

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

公开(公告)号：US20150125990A1

公开(公告)日：2015-05-07

申请号：US14507786

申请日：2014-10-06

Applicant: Solexel, Inc

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang

IPC: H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/04 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present disclosure presents a partially-transparent (see-through) three-dimensional thin film solar cell (3-D TFSC) substrate. The substrate includes a plurality of unit cells. Each unit cell structure has the shape of a truncated pyramid, and its parameters may be varied to allow a desired portion of sunlight to pass through.

Abstract translation: 本公开提供了部分透明（透明）三维薄膜太阳能电池（3-D TFSC）基板。 基板包括多个单元电池。 每个单元电池结构具有截头棱锥形状，并且其参数可以变化以允许期望的太阳光部分通过。

公开(公告)号：US20140127834A1

公开(公告)日：2014-05-08

申请号：US13942150

申请日：2013-07-15

Applicant: Solexel, Inc.

Inventor： David Xuan-Qi Wang ,  Mehrdad M. Moslehi ,  Somnath Nag

IPC: H01L21/66 ,  H01L21/02

CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate.

Abstract translation: 这里公开的方法提供了选择性地涂覆3-D衬底的顶表面或脊，同时避免液体涂覆材料吸收到3-D衬底上的微腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 模板包括具有在柱之间的柱和沟槽的模板衬底。 这些步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，该步骤包括从模板中释放半导体层并使用用于将液体涂覆材料施加到3-D衬底的表面的液体转移涂覆步骤涂覆3-D衬底。 该方法还可以包括通过选择性地涂覆衬底的顶部脊或表面来涂覆3-D衬底。

公开(公告)号：US09680041B2

公开(公告)日：2017-06-13

申请号：US14578161

申请日：2014-12-19

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang

IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/0468 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/054 ,  H01L31/056

CPC classification number: H01L31/0352 ,  H01L21/00 ,  H01L27/142 ,  H01L31/022458 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0468 ,  H01L31/054 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.

公开(公告)号：US20160336465A1

公开(公告)日：2016-11-17

申请号：US14949602

申请日：2015-11-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/068 ,  H01L31/02 ,  H01L31/0352

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

公开(公告)号：US20160013335A1

公开(公告)日：2016-01-14

申请号：US14615335

申请日：2015-02-05

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Pawan Kapur ,  Thom Stalcup ,  David Xuan-Qi Wang ,  George D. Kamian ,  Kamran Manteghi ,  Yen-Sheng Su ,  Pranav Anbalagan ,  Virendra V. Rana ,  Anthony Calcaterra ,  Gerry Olsen ,  Wojciech Worwag

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，将预浸料底板附着到基底电极和发射电极的交错图案上，在预浸料底板上形成孔，其提供对第一层 的导电金属，并且在预浸料背板的背面上沉积第二导电金属层，通过预浸料背板中的孔与第一导电金属层形成电互连。

公开(公告)号：US20150144190A1

公开(公告)日：2015-05-28

申请号：US14611982

申请日：2015-02-02

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Sam Tone Tor ,  Anthony Calcaterra

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，在交叉图案上形成导电发射器插头和基座插头，并且附接具有第二互补图案的基极和发射极的背板 在导电发射器和基座插头上形成电互连。

公开(公告)号：US09590035B2

公开(公告)日：2017-03-07

申请号：US14195748

申请日：2014-03-03

Applicant: Solexel, Inc.

Inventor： David Xuan-Qi Wang ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L29/06 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L21/3065 ,  H01L29/04

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: A semiconductor template having a top surface aligned along a (100) crystallographic orientation plane and an inverted pyramidal cavity defined by a plurality of walls aligned along a (111) crystallographic orientation plane. A method for manufacturing a semiconductor template by selectively removing silicon material from a silicon template to form a top surface aligned along a (100) crystallographic plane of the silicon template and a plurality of walls defining an inverted pyramidal cavity each aligned along a (111) crystallographic plane of the silicon template.

Abstract translation: 具有沿着（100）晶体取向平面排列的顶表面和由沿着（111）晶体取向平面排列的多个壁限定的倒置金字塔腔的半导体模板。 一种用于通过从硅模板中选择性地去除硅材料以形成沿硅模板的（100）结晶平面排列的顶表面的多个壁，以及限定沿着（111） 硅模板的晶体平面。