公开(公告)号：US20170236969A1

公开(公告)日：2017-08-17

申请号：US15276740

申请日：2016-09-26

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/1864 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

公开(公告)号：US20170222086A1

公开(公告)日：2017-08-03

申请号：US15491882

申请日：2017-04-19

Applicant: Solexel, Inc.

Inventor： Heather Deshazer ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Solene Coutant

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/1864 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions.

公开(公告)号：US09583651B2

公开(公告)日：2017-02-28

申请号：US13727393

申请日：2012-12-26

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Solene Coutant ,  Heather Deshazer ,  Pranav Anbalagan ,  Benjamin Rattle

IPC: H01L21/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.

Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。

公开(公告)号：US20150311378A1

公开(公告)日：2015-10-29

申请号：US14632696

申请日：2015-02-26

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Anand Deshpande ,  Sean M. Seutter ,  Heather Deshazer ,  Virendra V. Rana ,  Solene Coutant ,  Swaroop Kommera ,  Mehrdad M. Moslehi

IPC: H01L31/18

CPC classification number: H01L21/268 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions. Laser damage to the solar cell substrate is removed using an etch.

Abstract translation: 本申请提供了使用激光加工形成太阳能电池基底和发射极区域以及钝化层的有效和有效的结构和方法。 激光吸收剂钝化材料形成在太阳能电池基板上，并使用激光烧蚀进行图案化以形成基极和发射极区域。 使用蚀刻去除对太阳能电池基板的激光损伤。

公开(公告)号：US09130076B2

公开(公告)日：2015-09-08

申请号：US14601202

申请日：2015-01-20

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

IPC: H01L21/00 ,  H01L27/04 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电气隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

公开(公告)号：US20150171230A1

公开(公告)日：2015-06-18

申请号：US14493335

申请日：2014-09-22

Applicant: Solexel, Inc.

Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547

Abstract: Fabrication methods for forming thin film back contact solar cells are provided.

Abstract translation: 提供了形成薄膜背接触太阳能电池的制造方法。

公开(公告)号：US20140158193A1

公开(公告)日：2014-06-12

申请号：US13905113

申请日：2013-05-29

Applicant: Solexel, Inc.

Inventor： Anande Desphande ,  Pawan Kapur ,  Heather Deshazer ,  Mehrdad M. Moslehi ,  Virendra V. Rana ,  Sean M. Seutter ,  Pranav Anbalagan ,  Benjamin E. Rattle ,  Solene Coutant ,  Swaroop Kommera

IPC: H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures relating to back contact solar cells having patterned emitter and non-nested base regions are provided.

Abstract translation: 提供了具有图案化发射极和非嵌套基极区域的背接触太阳能电池相关的制造方法和结构。

公开(公告)号：US09929054B2

公开(公告)日：2018-03-27

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L31/18 ,  B23K26/00 ,  B23K26/08 ,  H01L31/0224 ,  H01L31/068 ,  B23K26/70 ,  B23K26/082 ,  B23K26/0622 ,  B81C1/00 ,  B42D25/00 ,  B23K26/244 ,  H01L33/00 ,  B23K101/40 ,  H01L25/065 ,  B23K103/00

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

公开(公告)号：US20160336473A1

公开(公告)日：2016-11-17

申请号：US14968855

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Benjamin Rattle ,  Heather Deshazer ,  Solene Coutant ,  Swaroop Kommera

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1896 ,  H01L33/0095 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

公开(公告)号：US20150243814A1

公开(公告)日：2015-08-27

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。