公开(公告)号：US20170244358A1

公开(公告)日：2017-08-24

申请号：US15405273

申请日：2017-01-12

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H02S40/34 ,  H02S50/10

CPC classification number: H02S40/34 ,  H01L31/02021 ,  H02S50/00 ,  H04Q9/00 ,  H04Q2209/30 ,  Y02E10/50

Abstract: A solar photovoltaic module remote-access module switch and real-time temperature monitoring system is provided.

公开(公告)号：US20170236969A1

公开(公告)日：2017-08-17

申请号：US15276740

申请日：2016-09-26

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/1864 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

公开(公告)号：US20170222086A1

公开(公告)日：2017-08-03

申请号：US15491882

申请日：2017-04-19

Applicant: Solexel, Inc.

Inventor： Heather Deshazer ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Mehrdad M. Moslehi ,  Solene Coutant

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/1864 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions.

公开(公告)号：US20170133983A1

公开(公告)日：2017-05-11

申请号：US15172146

申请日：2016-06-02

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Peter Park ,  Hien M. Nguyen ,  Steve J. Coonen ,  Gene Choi

IPC: H02S50/15 ,  H02S40/30

CPC classification number: H02S50/15 ,  H01L31/044 ,  H02S40/30 ,  Y02E10/50

Abstract: A photovoltaic module structure comprises a photovoltaic power generator of at least one solar cell, the photovoltaic power generator having a positive and a negative output terminal. A forward biased blocking diode electrically connected in parallel with a magnetically actuated normally-open bypass switch, the forward biased blocking diode and the magnetically actuated normally-open bypass switch electrically connected in series to the positive output terminal or the negative output terminal of the photovoltaic power generator. A module output terminal electrically connected as the output to the forward biased blocking diode and the magnetically actuated normally-open bypass switch. The photovoltaic power generator, the forward biased blocking diode, and the magnetically actuated normally-open bypass switch embedded within a module laminate.

公开(公告)号：US09583651B2

公开(公告)日：2017-02-28

申请号：US13727393

申请日：2012-12-26

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Solene Coutant ,  Heather Deshazer ,  Pranav Anbalagan ,  Benjamin Rattle

IPC: H01L21/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.

Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。

公开(公告)号：US20160365467A1

公开(公告)日：2016-12-15

申请号：US14975496

申请日：2015-12-18

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H01L31/0443 ,  H01L31/068 ,  H01L31/049 ,  H01L31/05 ,  H01L31/02 ,  H01L31/0224

CPC classification number: H01L31/0443 ,  H01L27/1421 ,  H01L31/0201 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  Y02B10/12 ,  Y02E10/547

Abstract: Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer has a background doping, a frontside, and a backside. A patterned first level metal is positioned over the layer backside and an electrically insulating backplane is positioned over the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned over the electrically insulating backplane and which connects to the first level metal through the backplane and electrically connects the monolithically integrated solar cell and bypass switch structure.

Abstract translation: 提供具有集成旁路开关的太阳能电池的结构和方法。 根据一个实施例，包括半导体层的集成太阳能电池和旁路开关具有背景掺杂，前面和背面。 图案化的第一级金属位于层背面上方，并且电绝缘底板位于第一级金属上方。 沟槽隔离图案将半导体层分隔成太阳能电池区域和至少一个单片集成旁路开关区域。 图案化的第二级金属位于电绝缘背板上方，并且通过背板连接到第一级金属，并电连接单片集成的太阳能电池和旁路开关结构。

公开(公告)号：US20160190365A1

公开(公告)日：2016-06-30

申请号：US14829635

申请日：2015-08-18

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H01L31/0224 ,  H01L31/0443

CPC classification number: H01L31/022458 ,  H01L31/022441 ,  H01L31/042 ,  H01L31/044 ,  H01L31/0443 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Solar cell structures having improved efficiency, distributed shade management, and reduced fabrication complexity.

Abstract translation: 太阳能电池结构具有改进的效率，分布式阴影管理和降低的制造复杂性。

公开(公告)号：US20160186358A1

公开(公告)日：2016-06-30

申请号：US14792412

申请日：2015-07-06

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: C25F7/02 ,  H01L21/687 ,  C25F3/12 ,  H01L21/67

CPC classification number: C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67086 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US20160172512A1

公开(公告)日：2016-06-16

申请号：US14903273

申请日：2014-07-30

Applicant: SOLEXEL, INC.

Inventor： Thom Stalcup ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Manteghi Kamran ,  David Dutton

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  H01L31/049 ,  H01L31/0516 ,  Y02E10/50

Abstract: A back contact solar cell structure having a light receiving frontside and a metallized backside of on-cell patterned base and emitter metallization electrically connected to base and emitter regions on a back contact solar cell semiconductor substrate. A backplane laminate layer made of resin and fibers and having a coefficient of thermal expansion relatively matched to the back contact solar cell semiconductor substrate is attached to the on-cell base and emitter metallization and to portions of the back contact solar cell semiconductor substrate not covered by the on-cell base and emitter metallization.

Abstract translation: 背接触太阳能电池结构，其具有电接触前侧和金属化背面的电池图案化基极和发射极金属化，电连接到背接触太阳能电池半导体衬底上的基极和发射极区域。 由背面接触太阳能电池半导体衬底相对匹配的具有相对于后接触太阳能电池半导体衬底的热膨胀系数的由树脂和纤维制成的背板层叠层附着到电池基极和发射极金属化以及未接触的背接触太阳能电池半导体衬底的部分 通过电池基极和发射极金属化。

公开(公告)号：US09337374B2

公开(公告)日：2016-05-10

申请号：US13726169

申请日：2012-12-23

Applicant: SOLEXEL, INC.

Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

IPC: B05C11/00 ,  H01L31/18 ,  H01L31/05 ,  C23C4/00 ,  C23C4/12

CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

Abstract translation: 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。