公开(公告)号：US20170243767A1

公开(公告)日：2017-08-24

申请号：US15398681

申请日：2017-01-04

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  H01L21/677 ,  C25F3/12 ,  C25F7/02

CPC classification number: H01L21/67086 ,  C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US20160336465A1

公开(公告)日：2016-11-17

申请号：US14949602

申请日：2015-11-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/068 ,  H01L31/02 ,  H01L31/0352

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

公开(公告)号：US20160013335A1

公开(公告)日：2016-01-14

申请号：US14615335

申请日：2015-02-05

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Pawan Kapur ,  Thom Stalcup ,  David Xuan-Qi Wang ,  George D. Kamian ,  Kamran Manteghi ,  Yen-Sheng Su ,  Pranav Anbalagan ,  Virendra V. Rana ,  Anthony Calcaterra ,  Gerry Olsen ,  Wojciech Worwag

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，将预浸料底板附着到基底电极和发射电极的交错图案上，在预浸料底板上形成孔，其提供对第一层 的导电金属，并且在预浸料背板的背面上沉积第二导电金属层，通过预浸料背板中的孔与第一导电金属层形成电互连。

公开(公告)号：US20140360567A1

公开(公告)日：2014-12-11

申请号：US13853031

申请日：2013-03-28

Applicant: Solexel, Inc.

Inventor： Sean M. Seutter ,  Mehrdad M. Moslehi ,  Anand Deshpande ,  Virendra V. Rana ,  Pawan Kapur ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  David Dutton ,  Takao Yonehara

IPC: H01L31/0224 ,  H01L31/0232 ,  H01B1/02 ,  H01L31/18

CPC classification number: H01B1/023 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods and structures for photovoltaic back contact solar cells having multi-level metallization with at least one aluminum-silicon alloy metallization layer are provided.

Abstract translation: 提供了具有至少一个铝 - 硅合金金属化层的具有多层金属化的光伏背接触太阳能电池的方法和结构。

公开(公告)号：US20130228221A1

公开(公告)日：2013-09-05

申请号：US13869928

申请日：2013-04-24

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化相关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。

公开(公告)号：US20160186358A1

公开(公告)日：2016-06-30

申请号：US14792412

申请日：2015-07-06

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: C25F7/02 ,  H01L21/687 ,  C25F3/12 ,  H01L21/67

CPC classification number: C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67086 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US09337374B2

公开(公告)日：2016-05-10

申请号：US13726169

申请日：2012-12-23

Applicant: SOLEXEL, INC.

Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

IPC: B05C11/00 ,  H01L31/18 ,  H01L31/05 ,  C23C4/00 ,  C23C4/12

CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

Abstract translation: 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。

公开(公告)号：US20150299892A1

公开(公告)日：2015-10-22

申请号：US14589847

申请日：2015-01-05

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Doug Crafts ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  George D. Kamian ,  Somnath Nag

IPC: C25F3/12 ,  H01L31/18 ,  C25F7/00

CPC classification number: C25F3/12 ,  C25D11/32 ,  C25F7/00 ,  H01L21/67005 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/6776 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

Abstract translation: 本发明的一个目的是提供高生产率，低成本的制造设备用于大量生产光伏（PV）太阳能电池器件结构。 本公开的另一个目的是通过使用气相源硅与现有技术相比减少材料加工步骤和材料成本。 本公开教导了制造与气相衬底生长工艺相容的牺牲衬底基底层。 在本公开中使用多孔硅作为牺牲层。 此外，本公开提供了制造牺牲多孔硅PV电池 - 衬底基底层的设备。

公开(公告)号：US20140318611A1

公开(公告)日：2014-10-30

申请号：US13731112

申请日：2012-12-31

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Thom Stalcup

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming thin film back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化相关的制造方法和结构以及用于形成薄膜背接触太阳能电池的制造方法和结构。

公开(公告)号：US20150243814A1

公开(公告)日：2015-08-27

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。