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    LAMINATED BACKPLANE FOR SOLAR CELLS
    2.
    发明申请
    LAMINATED BACKPLANE FOR SOLAR CELLS 审中-公开
    用于太阳能电池的层压背板

    公开(公告)号：US20160172512A1

    公开(公告)日：2016-06-16

    申请号：US14903273

    申请日：2014-07-30

    Applicant: SOLEXEL, INC.

    Inventor： Thom Stalcup ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Manteghi Kamran ,  David Dutton

    IPC: H01L31/0224

    CPC classification number: H01L31/022441 ,  H01L31/049 ,  H01L31/0516 ,  Y02E10/50

    Abstract: A back contact solar cell structure having a light receiving frontside and a metallized backside of on-cell patterned base and emitter metallization electrically connected to base and emitter regions on a back contact solar cell semiconductor substrate. A backplane laminate layer made of resin and fibers and having a coefficient of thermal expansion relatively matched to the back contact solar cell semiconductor substrate is attached to the on-cell base and emitter metallization and to portions of the back contact solar cell semiconductor substrate not covered by the on-cell base and emitter metallization.

    Abstract translation: 背接触太阳能电池结构，其具有电接触前侧和金属化背面的电池图案化基极和发射极金属化，电连接到背接触太阳能电池半导体衬底上的基极和发射极区域。 由背面接触太阳能电池半导体衬底相对匹配的具有相对于后接触太阳能电池半导体衬底的热膨胀系数的由树脂和纤维制成的背板层叠层附着到电池基极和发射极金属化以及未接触的背接触太阳能电池半导体衬底的部分 通过电池基极和发射极金属化。

    High productivity spray processing for the metallization of semiconductor workpieces
    3.
    发明授权
    High productivity spray processing for the metallization of semiconductor workpieces 有权
    用于半导体工件金属化的高生产率喷雾处理

    公开(公告)号：US09337374B2

    公开(公告)日：2016-05-10

    申请号：US13726169

    申请日：2012-12-23

    Applicant: SOLEXEL, INC.

    Inventor： Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Anthony Calcaterra ,  David Dutton ,  Pawan Kapur ,  Sean Seutter ,  Homi Fatemi

    IPC: B05C11/00 ,  H01L31/18 ,  H01L31/05 ,  C23C4/00 ,  C23C4/12

    CPC classification number: H01L31/18 ,  C23C4/01 ,  C23C4/12 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

    Abstract: Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

    Abstract translation: 用于多个半导体工件的金属化的加工设备。 受控的大气非氧化性气体区域包括至少两个封闭的沉积区域，受控的大气非氧化性气体区域与外部氧化环境隔离。 温度控制器在所述至少两个封闭的沉积区域中的每一个中调节半导体工件的温度。 每个封闭的沉积区域包括用于半导体工件的金属化的至少一个喷枪。 运输系统使半导体工件移动通过受控的大气非氧化气体区域。 批量载体板通过受控的大气非氧化气体区域运送半导体工件。 受控的大气非氧化性气体区域还包括基于气体的预清洁区域。

    Trench isolation for monolithically isled solar photovoltaic cells and modules
    5.
    发明授权
    Trench isolation for monolithically isled solar photovoltaic cells and modules 有权
    单片太阳能光伏电池和模块的沟槽隔离

    公开(公告)号：US09130076B2

    公开(公告)日：2015-09-08

    申请号：US14601202

    申请日：2015-01-20

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

    IPC: H01L21/00 ,  H01L27/04 ,  H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

    Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电气隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

    Solar cell metallization
    9.
    发明授权
    Solar cell metallization 有权

    公开(公告)号：US09911875B2

    公开(公告)日：2018-03-06

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/05 ,  H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    Structures and methods for high-efficiency pyramidal three-dimensional solar cells
    10.
    发明授权
    Structures and methods for high-efficiency pyramidal three-dimensional solar cells 有权
    高效金字塔三维太阳能电池的结构与方法

    公开(公告)号：US09595622B2

    公开(公告)日：2017-03-14

    申请号：US14601123

    申请日：2015-01-20

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Mehrdad M. Moslehi

    IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0445

    CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. Pyramid-like unit cell structures 16 and 50 enable epitaxial growth through an open pyramidal structure 3-D TFSC embodiments 70, 82, 100, and 110 may be combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, and front and back metal contacts allows for simple processing. Other embodiments disclose a selective emitter, selective backside metal contacts, and front-side SiN ARC layers. Several processing methods, including process flows 150, 200, 250, 300, and 350, enable production of these 3-D TFSCs.

    Abstract translation: 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 金字塔状晶胞结构16和50能够通过开放的金字塔结构进行外延生长3-D TFSC实施例70,82,100和110可以根据需要组合。 具有基板，发射极，发射极上的氧化物以及前后金属触点的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背面金属触点和前侧SiN ARC层。 包括工艺流程150,200,250,300和350在内的几种加工方法使得能够生产这些3-D TFSC。

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