An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a bottom anti-reflective coating (BARC), baking to induce cross-linking in the BARC, CMP to remove a first portion of the BARC and form a planar surface, then plasma etching to effectuate a planar recessing of the BARC. The plasma etching can have a low selectivity between the BARC and the material being recessed, whereby the BARC and the material are recessed simultaneously. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The method can be particularly effective when an abrasive used during CMP forms ester linkages with the BARC.