Invention Grant
- Patent Title: Radiation emitting or receiving optoelectronic semiconductor chip
- Patent Title (中): 辐射发射或接收光电半导体芯片
-
Application No.: US14362155Application Date: 2012-11-27
-
Publication No.: US09257611B2Publication Date: 2016-02-09
- Inventor: Martin Mandl , Martin Strassburg , Christopher Kölper , Alexander F. Pfeuffer , Patrick Rode
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102011056140 20111207
- International Application: PCT/EP2012/073729 WO 20121127
- International Announcement: WO2013/083438 WO 20130613
- Main IPC: H01L29/18
- IPC: H01L29/18 ; H01L33/44 ; H01L33/18 ; H01L33/24 ; H01L27/15 ; H01L33/60 ; H01L33/08 ; H01L33/22 ; H01L33/42 ; H01L33/46

Abstract:
An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.
Public/Granted literature
- US20140339577A1 OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2014-11-20
Information query
IPC分类: