公开(公告)号：US20150228858A1

公开(公告)日：2015-08-13

申请号：US14427687

申请日：2013-09-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauss ,  Patrick Rode

IPC: H01L33/32 ,  H01L33/02

CPC classification number: H01L33/325 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/32

Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.

Abstract translation: 光电子部件包括具有第一氮化镓层和含铝氮化物中间层的层结构。 在这种情况下，含铝氮化物中间层与第一氮化镓层相邻。 层结构具有与含铝氮化物中间层相邻的未掺杂的第二氮化镓层。

公开(公告)号：US20130221392A1

公开(公告)日：2013-08-29

申请号：US13862096

申请日：2013-04-12

Applicant: Osram Opto Semiconductors GmbH

Inventor： Karl Engl ,  Patrick Rode ,  Lutz Hoeppel ,  Matthias Sabathil

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified.

Abstract translation: 光电半导体本体包括具有适于产生电磁辐射的有源层的半导体层序列和第一和第二电连接层。 半导体本体被设置用于从前侧发射电磁辐射。 第一和第二电连接层布置在与前侧相对的后侧，并且通过分离层彼此电绝缘。 第一电连接层，第二电连接层和分离层横向重叠，并且第二电连接层的部分区域从后侧沿着正面的方向通过有源层中的穿透而延伸。 此外，规定了这种光电子半导体体的制造方法。

公开(公告)号：US09825198B2

公开(公告)日：2017-11-21

申请号：US14364099

申请日：2012-11-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Patrick Rode ,  Lutz Hoeppel ,  Norwin von Malm ,  Stefan Illek ,  Albrecht Kieslich ,  Siegfried Herrmann

IPC: H01L21/304 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/283 ,  H01L31/18 ,  H01L33/36 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L31/1876 ,  H01L33/005 ,  H01L33/36 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

公开(公告)号：US09660137B2

公开(公告)日：2017-05-23

申请号：US14891924

申请日：2014-05-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Werner Bergbauer ,  Philipp Drechsel ,  Peter Stauss ,  Patrick Rode

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/0075 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12

Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0≦x≦1, 0≦y≦1 and x+y≦1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.

公开(公告)号：US20150279903A1

公开(公告)日：2015-10-01

申请号：US14434760

申请日：2013-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Koelper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

Abstract translation: 在该方法的至少一个实施例中，所述方法包括以下步骤：A）在生长衬底（2）上产生具有半导体层序列（3）的辐射活性岛（4），其中岛（4）各自包括 半导体层序列（3）的至少一个活性区域（33）和从生长衬底的顶视图观察的岛状物（4）的平均直径为50nm-10μm，包括B， ）在面向生长衬底（2）的岛状物（4）的一侧上产生分离层（5），其中分离层（5）围绕生长的顶视图中的所有岛（4）周围 衬底（2），C）将载体衬底（6）附接到所述岛（4）背离所述生长衬底（2）的一侧，以及D）将所述生长衬底（2）从所述岛（4）上分离， 其中分离层（5）的至少一部分在分离期间被破坏和/或至少暂时软化。

公开(公告)号：US20140339591A1

公开(公告)日：2014-11-20

申请号：US14447679

申请日：2014-07-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Werner Bergbauer ,  Patrick Rode ,  Martin Straßssburg

IPC: H01L33/12 ,  H01L33/62 ,  H01L33/50 ,  H01L33/32 ,  H01L33/20

CPC classification number: H01L33/12 ,  B82Y40/00 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48463

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

Abstract translation: 光电子半导体芯片包括在载体基板上包括氮化物化合物半导体材料的半导体层堆叠，其中所述半导体层堆叠包括发射电磁辐射的有源层，所述半导体层堆叠被布置在第一导电层和 所述第一导电层与所述半导体层堆叠的前部相邻，所述第一导电层电连接到覆盖所述半导体层堆叠的背面的至少一部分的第一电连接层， 并且第二导电类型的层电连接到布置在后面的第二电连接层。

公开(公告)号：US09853186B2

公开(公告)日：2017-12-26

申请号：US15144728

申请日：2016-05-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Andreas Plöβl ,  Hans-Jürgen Lugauer ,  Alexander Linkov ,  Patrick Rode

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/50 ,  H01L33/26 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/26 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

公开(公告)号：US20160133794A1

公开(公告)日：2016-05-12

申请号：US14987905

申请日：2016-01-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L33/44 ,  H01L33/14 ,  H01L27/15 ,  H01L33/20 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

Abstract translation: 光电子半导体芯片包括彼此间隔一定距离的多个有源区和连续电流扩散层，其中至少一个有源区具有主延伸方向，有源区中的一个具有形成有 所述有源区具有至少在所述有源区的主延伸方向的横向方向上至少覆盖所述芯区的有源层，所述有源区具有形成有第二半导体材料并覆盖所述有源区的覆盖层 至少在相对于有源区域的主延伸方向横向的方向上，并且电流扩展层覆盖有源区域的所有覆盖层。

公开(公告)号：US09293652B2

公开(公告)日：2016-03-22

申请号：US14818630

申请日：2015-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Werner Bergbauer ,  Patrick Rode ,  Martin Strassburg

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/50 ,  H01L33/20 ,  H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/22 ,  B82Y40/00

CPC classification number: H01L33/12 ,  B82Y40/00 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48463

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back.

Abstract translation: 光电子半导体芯片包括在载体基板上包括氮化物化合物半导体材料的半导体层堆叠，其中所述半导体层堆叠包括发射电磁辐射的有源层，所述半导体层堆叠被布置在第一导电层和 所述第一导电层与所述半导体层堆叠的前部相邻，所述第一导电层电连接到覆盖所述半导体层堆叠的背面的至少一部分的第一电连接层， 并且第二导电类型的层电连接到布置在后面的第二电连接层。

公开(公告)号：US09257611B2

公开(公告)日：2016-02-09

申请号：US14362155

申请日：2012-11-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

IPC: H01L29/18 ,  H01L33/44 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/60 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

Abstract translation: 光电子半导体芯片包括彼此间隔设置的多个有源区和布置在多个有源区的下侧的反射层，其中至少一个有源区具有主延伸方向， 所述有源区具有形成有第一半导体材料的芯区，所述有源区具有有源层，至少在相对于所述有源区的主延伸方向横向的方向上覆盖所述芯区，所述有源区具有覆盖层 形成有第二半导体材料，并且至少在相对于有源区的主延伸方向横向的方向上覆盖有源层，并且反射层反射在有源层中操作期间产生的电磁辐射。