Invention Grant
- Patent Title: Programming a memory cell using a dual polarity charge pump
- Patent Title (中): 使用双极性电荷泵编程存储单元
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Application No.: US14679654Application Date: 2015-04-06
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Publication No.: US09263142B2Publication Date: 2016-02-16
- Inventor: YoungPil Kim , Dadi Setiadi , Wei Tian , Antoine Khoueir , Rodney V. Bowman
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/14 ; G11C11/56 ; G11C13/00 ; G11C16/16

Abstract:
Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.
Public/Granted literature
- US20150213901A1 Programming a Memory Cell Using a Dual Polarity Charge Pump Public/Granted day:2015-07-30
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