Invention Grant
US09263142B2 Programming a memory cell using a dual polarity charge pump 有权
使用双极性电荷泵编程存储单元

Programming a memory cell using a dual polarity charge pump
Abstract:
Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.
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