公开(公告)号：US09263142B2

公开(公告)日：2016-02-16

申请号：US14679654

申请日：2015-04-06

Applicant: Seagate Technology LLC

Inventor： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney V. Bowman

IPC: G11C11/34 ,  G11C16/04 ,  G11C16/14 ,  G11C11/56 ,  G11C13/00 ,  G11C16/16

CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/16 ,  G11C2013/0073 ,  G11C2211/5646

Abstract: Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.

Abstract translation: 用于管理存储器中的数据的装置和方法，诸如但不限于闪存阵列。 在一些实施例中，装置包括存储器单元阵列和双极性电荷泵。 双极性电荷泵具有正极性电压源，其向电荷存储装置施加正电压以将所选择的存储单元编程为第一编程状态;以及负极性电压源，其向电荷存储装置施加负电压 将所选择的存储器单元编程到不同的第二编程状态。

公开(公告)号：US20150213901A1

公开(公告)日：2015-07-30

申请号：US14679654

申请日：2015-04-06

Applicant: Seagate Technology LLC

Inventor： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney V. Bowman

IPC: G11C16/14 ,  G11C11/56

CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/16 ,  G11C2013/0073 ,  G11C2211/5646

Abstract: Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.

Abstract translation: 用于管理存储器中的数据的装置和方法，诸如但不限于闪存阵列。 在一些实施例中，装置包括存储器单元阵列和双极性电荷泵。 双极性电荷泵具有正极性电压源，其向电荷存储装置施加正电压以将所选择的存储单元编程为第一编程状态;以及负极性电压源，其向电荷存储装置施加负电压 将所选择的存储器单元编程到不同的第二编程状态。