Some embodiments relate to a memory cell with a charge-trapping layer of nanocrystals, comprising a tunneling oxide layer along a select gate, a control oxide layer formed between a control gate and the tunnel oxide layer, and a plurality of nanocrystals arranged between the tunneling and control oxide layers. An encapsulating layer isolates the nanocrystals from the control oxide layer. Contact formation to the select gate includes a two-step etch. A first etch includes a selectivity between oxide and the encapsulating layer, and etches away the control oxide layer while leaving the encapsulating layer intact. A second etch, which has an opposite selectivity of the first etch, then etches away the encapsulating layer while leaving the tunneling oxide layer intact. As a result, the control oxide layer and nanocrystals are etched away from a surface of the select gate, while leaving the tunneling oxide layer intact for contact isolation.