Invention Grant
US09287363B2 Semiconductor device, method of manufacturing the same and power semiconductor device including the same
有权
半导体装置及其制造方法以及包括该半导体装置的功率半导体装置
- Patent Title: Semiconductor device, method of manufacturing the same and power semiconductor device including the same
- Patent Title (中): 半导体装置及其制造方法以及包括该半导体装置的功率半导体装置
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Application No.: US14273269Application Date: 2014-05-08
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Publication No.: US09287363B2Publication Date: 2016-03-15
- Inventor: Jae Hoon Park , In Hyuk Song , Chang Su Jang , Kee Ju Um
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0165332 20131227
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/04 ; H01L29/78 ; H01L29/51 ; H01L29/49
Abstract:
A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer.
Public/Granted literature
- US20150187882A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2015-07-02
Information query
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