发明授权
US09299429B2 Nonvolatile memory device using a resistance material and a driving method thereof
有权
使用电阻材料的非易失性存储器件及其驱动方法
- 专利标题： Nonvolatile memory device using a resistance material and a driving method thereof
- 专利标题（中）： 使用电阻材料的非易失性存储器件及其驱动方法
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申请号： US14317162申请日： 2014-06-27
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公开(公告)号： US09299429B2公开(公告)日： 2016-03-29
- 发明人: Yong-Jun Lee , Hoi-Ju Chung , Yong-Jin Kwon , Hyo-Jin Kwon , Eun-Hye Park
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2013-0074628 20130627
- 主分类号： G11C15/00
- IPC分类号： G11C15/00 ; G11C13/00 ; G11C7/10 ; G11C11/56
摘要：
A nonvolatile memory device includes a buffer memory, a read circuit configured to read first data stored in the buffer memory in a first read operation, and a write circuit configured to write second data in the buffer memory in a first write operation, wherein the first write operation is performed when a first internal write command is generated during the first read operation.
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