Invention Grant
US09299429B2 Nonvolatile memory device using a resistance material and a driving method thereof
有权
使用电阻材料的非易失性存储器件及其驱动方法
- Patent Title: Nonvolatile memory device using a resistance material and a driving method thereof
- Patent Title (中): 使用电阻材料的非易失性存储器件及其驱动方法
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Application No.: US14317162Application Date: 2014-06-27
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Publication No.: US09299429B2Publication Date: 2016-03-29
- Inventor: Yong-Jun Lee , Hoi-Ju Chung , Yong-Jin Kwon , Hyo-Jin Kwon , Eun-Hye Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0074628 20130627
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C13/00 ; G11C7/10 ; G11C11/56
Abstract:
A nonvolatile memory device includes a buffer memory, a read circuit configured to read first data stored in the buffer memory in a first read operation, and a write circuit configured to write second data in the buffer memory in a first write operation, wherein the first write operation is performed when a first internal write command is generated during the first read operation.
Public/Granted literature
- US20150003137A1 NONVOLATILE MEMORY DEVICE USING A RESISTANCE MATERIAL AND A DRIVING METHOD THEREOF Public/Granted day:2015-01-01
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