发明授权
US09350124B2 High speed circuit assembly with integral terminal and mating bias loading electrical connector assembly
有权
具有集成端子和配合偏置负载电连接器组件的高速电路组件
- 专利标题: High speed circuit assembly with integral terminal and mating bias loading electrical connector assembly
- 专利标题(中): 具有集成端子和配合偏置负载电连接器组件的高速电路组件
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申请号: US14408039申请日: 2013-03-13
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公开(公告)号: US09350124B2公开(公告)日: 2016-05-24
- 发明人: James Rathburn
- 申请人: HSIO TECHNOLOGIES, LLC
- 申请人地址: US MN Maple Grove
- 专利权人: HSIO Technologies, LLC
- 当前专利权人: HSIO Technologies, LLC
- 当前专利权人地址: US MN Maple Grove
- 国际申请: PCT/US2013/030981 WO 20130313
- 国际公布: WO2014/011228 WO 20140116
- 主分类号: H01R12/68
- IPC分类号: H01R12/68 ; H01R12/50 ; H01R13/24 ; H01R12/82 ; H05K3/36 ; H05K3/40 ; H01R12/73 ; H01L23/00 ; H05K1/09 ; H05K1/11 ; H05K1/18 ; H05K3/00 ; H05K3/42 ; H05K3/46
摘要:
A method of making an array of integral terminals on a circuit assembly. The method includes the steps of depositing at least a first liquid dielectric layer on the first surface of a first circuit member, imaged to include a plurality of first recesses corresponding to the array of integral terminals. The selected surfaces of the first recesses are processed to accept electro-less conductive plating deposition. Electro-lessly plating is applied to the selected surfaces of the first recesses to create a plurality of first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. Electro-plating is applied to the electro-less plating to substantially first recesses with a conductive material. The steps of depositing, processing, electro-less plating, and electro-plating are repeated to form the integral terminals of a desired shape. The dielectric layers are removed to expose the terminals.
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