摘要:
An electrical interconnect providing an interconnect between contacts on an IC device and contact pads on a printed circuit board (PCB). The electrical interconnect includes a resilient substrate with a plurality of through holes extending from a first surface to a second surface. A resilient material is located in the through holes. The resilient material includes an opening extending from the first surface to the second surface. A plurality of discrete, free-flowing conductive nano-particles are located in the openings of the resilient material. The conductive particles are substantially free of non-conductive materials. A plurality of first contact members are located in the through holes adjacent the first surface and a plurality of second contact members are located in the through holes adjacent the second surface. The first and second contact members are electrically coupled to the nano-particles.
摘要:
A method of making a package for a semiconductor device having electrical terminals. At least one semiconductor device is located on a substrate. A first dielectric layer is printed on at least a portion of the semiconductor device to include first recesses aligned with a plurality of the electrical terminals. A conductive material is deposited in the first recesses forming contact members. A second dielectric layer is printed on at least a portion of the first dielectric layer to include second recesses aligned with a plurality of the first recesses. A conductive material is deposited in at least a portion of the second recesses to include a circuit geometry and a plurality of exposed terminals. A compliant material is deposited in recesses in one or more of the first and second dielectric layers adjacent to a plurality of the exposed terminals.
摘要:
An electrical interconnect between terminals on an IC device and contact pads on a printed circuit board (PCB). The electrical interconnect includes a substrate with a first surface having a plurality of openings arranged to correspond to the terminals on the IC device. A compliant material is located in the openings. A plurality of first conductive traces extend along the first surface of the substrate and onto the compliant material. The compliant material provides a biasing force that resists flexure of the first conductive traces into the openings. Vias extending through the substrate are electrically coupled the first conductive traces. A plurality of second conductive traces extend along the second surface of the substrate and are electrically coupled to a vias. The second conductive traces are configured to electrical couple with the contact pads on the PCB.
摘要:
A method of making a multilayered, fusion bonded circuit structure. A first circuitry layer is attached to a first major surface of a first LCP substrate. A plurality of first recesses are formed that extend from a second major surface of the first substrate to the first circuitry layer. The first recesses are then plated to form a plurality of first conductive pillars of solid metal that substantially fill the first recesses. A plurality of second recesses are formed in a second LCP substrate corresponding to a plurality of the first conductive pillars. The second recess are plated to form a plurality of second conductive structures that extend between first and second major surfaces of the second substrate. The second major surface of the first substrate is positioned adjacent to the second major surface of the second substrate. The first conductive pillars are aligned with the second conductive structures. The stack is then fusion bonded to mechanically couple the first conductive pillars to the second conductive structures.
摘要:
A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.
摘要:
A test socket for IC devices includes a multi-layered socket housing with at least one center layer and first and second surface layers. The first and second surface layers have a thickness and dielectric constant less than that of the center layers. A plurality of contact members are located in center openings in the center layer with distal ends extending into openings in the first and second layers. The distal ends of the contact members having at least one dimension greater than the openings in the first and second surface layers to retain the contact members in the socket housing. The contact members include center portions with major diameters less than the diameters of the center openings, such that an air gap is maintained between the contact members and the center layer.
摘要:
An interconnect assembly including a substrate with a plurality of through holes extending from a first surface to a second surface. A plurality of discrete contact member are located in the plurality of through holes. The contact members include proximal ends that are accessible from the second surface, distal ends extending above the first surface, and intermediate portions engaged with an engagement region of the substrate located between the first surface and the recesses. Retention members are coupled with at least a portion of the proximal ends to retain the contact members in the through holes. The retention members can be made from a variety of materials with different levels of conductivity, ranging from highly conductive to non-conductive.
摘要:
A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A conductive structure is disposed within the through holes A plurality of discrete contact members are located in the plurality of the through holes, within the conductive structure. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. The conductive structure can be electrically coupled to circuit geometry. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to desired circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
摘要:
A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.
摘要:
A method of making an array of integral terminals on a circuit assembly. The method includes the steps of depositing at least a first liquid dielectric layer on the first surface of a first circuit member, imaged to include a plurality of first recesses corresponding to the array of integral terminals. The selected surfaces of the first recesses are processed to accept electro-less conductive plating deposition. Electro-lessly plating is applied to the selected surfaces of the first recesses to create a plurality of first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. Electro-plating is applied to the electro-less plating to substantially first recesses with a conductive material. The steps of depositing, processing, electro-less plating, and electro-plating are repeated to form the integral terminals of a desired shape. The dielectric layers are removed to expose the terminals.