Invention Grant
US09390910B2 Gas flow profile modulated control of overlay in plasma CVD films
有权
等离子体CVD膜中气体流动剖面调制控制
- Patent Title: Gas flow profile modulated control of overlay in plasma CVD films
- Patent Title (中): 等离子体CVD膜中气体流动剖面调制控制
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Application No.: US14549380Application Date: 2014-11-20
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Publication No.: US09390910B2Publication Date: 2016-07-12
- Inventor: Prashant Kumar Kulshreshtha , Sudha Rathi , Praket P. Jha , Saptarshi Basu , Kwangduk Douglas Lee , Martin J. Seamons , Bok Hoen Kim , Ganesh Balasubramanian , Ziqing Duan , Lei Jing , Mandar B. Pandit
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/443
- IPC: H01L21/443 ; H01L21/02 ; H01L21/66 ; H01L21/033 ; C23C16/458 ; C23C16/46 ; C23C16/455

Abstract:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
Public/Granted literature
- US20160099147A1 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS Public/Granted day:2016-04-07
Information query
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