公开(公告)号：US20180096843A1

公开(公告)日：2018-04-05

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/311 ,  H01L21/66 ,  C23C16/26 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US09837265B2

公开(公告)日：2017-12-05

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20240153745A1

公开(公告)日：2024-05-09

申请号：US17981394

申请日：2022-11-05

Applicant: Applied Materials, Inc.

Inventor： Katherine Woo ,  Jennifer Y. Sun ,  Jian Li ,  Wenhao Zhang ,  Mayur Govind Kulkarni ,  Chidambara A. Ramalingam ,  Ryan Sheil ,  Martin J. Seamons ,  Nitin Deepak

IPC: H01J37/32 ,  C23C16/455 ,  C23C28/04 ,  C25D11/18

CPC classification number: H01J37/32495 ,  C23C16/45525 ,  C23C28/046 ,  C25D11/18 ,  H01J37/32467

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.

公开(公告)号：US20220037147A1

公开(公告)日：2022-02-03

申请号：US17386724

申请日：2021-07-28

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Jingmei Liang ,  Martin J. Seamons ,  Michael Stolfi ,  Benjamin Colombeau

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L27/12

Abstract: Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (

公开(公告)号：US20250060321A1

公开(公告)日：2025-02-20

申请号：US18234777

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Elias Anthony Martinez ,  Sidharth Bhatia ,  Sarah Michelle Bobek ,  Ka Shun Wong ,  Zhi Wang ,  Martin J. Seamons ,  Raj Singu ,  Abdul Aziz Khaja ,  Ganesh Balasubramanian ,  Mark McTaggart Wylie

IPC: G01N21/95 ,  G01N35/00

Abstract: Disclosed are systems and techniques for fast and efficient detection of defects in wafers, including a system that has a factory interface (FI) coupled to a wafer carrier and a load lock chamber. The FI includes a robot fetches a wafer from the wafer carrier and deliver the first wafer to an aligner device. The aligner device imparts rotational motion to the wafer and identifies, using the rotational motion of the wafer, a position of a reference feature of the wafer. The FI further includes an optical inspection system that collects, during the rotational motion imparted to the wafer, an imaging data for the first wafer. The system further includes a processing device that performs evaluation, using the imaging data, of a presence of defect(s) in the wafer, and evaluates suitability of the wafer for wafer processing.

公开(公告)号：US10373822B2

公开(公告)日：2019-08-06

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US09390910B2

公开(公告)日：2016-07-12

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/443 ,  H01L21/02 ,  H01L21/66 ,  H01L21/033 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。