Invention Grant
- Patent Title: Memory device and erasing method thereof
- Patent Title (中): 存储器件及其擦除方法
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Application No.: US14160612Application Date: 2014-01-22
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Publication No.: US09400712B2Publication Date: 2016-07-26
- Inventor: Chin-Hung Chang , Chia-Feng Cheng , Yu-Chen Wang , Ken-Hui Chen , Kuen-Long Chang
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C16/16 ; G11C29/42 ; G11C16/00

Abstract:
An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.
Public/Granted literature
- US20150205666A1 MEMORY DEVICE AND ERASING METHOD THEREOF Public/Granted day:2015-07-23
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