Invention Grant
US09443561B1 Ring networks for intra- and inter-memory I/O including 3D-stacked memories
有权
用于内部和内部存储器I / O的环形网络,包括3D堆叠存储器
- Patent Title: Ring networks for intra- and inter-memory I/O including 3D-stacked memories
- Patent Title (中): 用于内部和内部存储器I / O的环形网络,包括3D堆叠存储器
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Application No.: US14719200Application Date: 2015-05-21
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Publication No.: US09443561B1Publication Date: 2016-09-13
- Inventor: David Roberts , Yasuko Eckert , Mitesh Meswani , Indrani Paul
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Staniford Tomita LLP
- Main IPC: G11C5/02
- IPC: G11C5/02 ; H04L12/933 ; G06F13/42 ; G11C5/06 ; G06F13/40

Abstract:
Embodiments are described for a communications interconnect scheme for 3D stacked memory devices. A ring network design is used for networks of memory chips organized as individual devices with multiple dies or wafers. The design comprises a three-tier ring network where each ring serves a different set of memory blocks. One ring or set of rings interconnects memory within a die (inter-bank), a second ring or set of rings interconnects memory across die in a stack (inter-die), and the third ring or set of rings interconnects memory across stacks or chip packages (inter-stack).
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