Invention Grant
US09469800B2 Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same
有权
研磨粒子，研磨浆料，以及使用其制造半导体器件的方法
- Patent Title: Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same
- Patent Title (中): 研磨粒子，研磨浆料，以及使用其制造半导体器件的方法
-
Application No.: US14483135Application Date: 2014-09-10
-
Publication No.: US09469800B2Publication Date: 2016-10-18
- Inventor: Seung Won Jung
- Applicant: UBMATERIALS INC.
- Applicant Address: KR
- Assignee: INDUSTRIAL BANK OF KOREA
- Current Assignee: INDUSTRIAL BANK OF KOREA
- Current Assignee Address: KR
- Priority: KR10-2013-0109871 20130912
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3205 ; H01L21/321 ; C09K3/14 ; C09G1/02 ; C09G1/04 ; H01L21/3105 ; H01L27/115
Abstract:
Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
Public/Granted literature
- US20150072522A1 ABRASIVE PARTICLE, POLISHING SLURRY, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2015-03-12
Information query
IPC分类:
