公开(公告)号：US09206337B2

公开(公告)日：2015-12-08

申请号：US14483140

申请日：2014-09-10

Applicant: UBMATERIALS INC.

Inventor： Seung Won Jung

IPC: C09K13/00 ,  C09G1/02 ,  C09K3/14 ,  C01F17/00

CPC classification number: C09G1/02 ,  C01F17/0043 ,  C01P2004/40 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/22 ,  C09K3/1409 ,  C09K3/1445 ,  C09K3/1463

Abstract: Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.

Abstract translation: 提供一种制造包括母体颗粒和形成在母体颗粒表面上的多个辅助颗粒的磨料颗粒的方法，以及研磨浆料的制造方法，其中研磨颗粒与抛光促进剂和 pH调节剂。

公开(公告)号：US09469800B2

公开(公告)日：2016-10-18

申请号：US14483135

申请日：2014-09-10

Applicant: UBMATERIALS INC.

Inventor： Seung Won Jung

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/321 ,  C09K3/14 ,  C09G1/02 ,  C09G1/04 ,  H01L21/3105 ,  H01L27/115

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  H01L21/31053 ,  H01L27/115

Abstract: Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.

Abstract translation: 提供了包括在母粒表面上形成的辅助颗粒的磨料颗粒，通过将研磨颗粒与抛光促进剂和pH调节剂混合制备的研磨浆料，以及制造半导体器件的方法，其中绝缘层 通过抛光浆料抛光，同时使用导电层作为抛光停止层。

公开(公告)号：US09567490B2

公开(公告)日：2017-02-14

申请号：US14519122

申请日：2014-10-20

Applicant: UBMATERIALS INC.

Inventor： Seung Won Jung

IPC: C09K13/00 ,  C09K13/02 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  H01L21/304 ,  C23F3/06

CPC classification number: C09G1/02 ,  C09K3/1454 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/304 ,  H01L21/3212

Abstract: A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.

Abstract translation: 公开了一种用于钨的抛光浆料和基材研磨方法。 抛光浆料包括用于进行抛光并具有正ζ电位的研磨剂，以及用于促进钨的氧化和用于控制研磨剂的ζ电位的电位调节器。

公开(公告)号：US09493679B2

公开(公告)日：2016-11-15

申请号：US14874379

申请日：2015-10-02

Applicant: UBMATERIALS INC.

Inventor： Seung Won Jung

IPC: C09K13/00 ,  C09G1/02 ,  C09K3/14 ,  C01F17/00

CPC classification number: C09G1/02 ,  C01F17/0043 ,  C01P2004/40 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/22 ,  C09K3/1409 ,  C09K3/1445 ,  C09K3/1463

Abstract: Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.