发明授权
- 专利标题： Metal gate structure and method
- 专利标题（中）： 金属门结构及方法
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申请号： US14956071申请日： 2015-12-01
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公开(公告)号： US09478466B2公开(公告)日： 2016-10-25
- 发明人: Hsiu-Jung Yen , Jen-Pan Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L49/02 ; H01L27/06 ; H01L21/306 ; H01L21/31 ; H01L21/3205 ; H01L21/321 ; H01L21/3213 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L29/51
摘要：
A method comprises removing a dummy gate electrode layer to form a gate trench in a dielectric layer over a substrate, forming a resistor trench over the substrate, depositing a plurality of films on a bottom of the gate trench, a bottom of the resistor trench, sidewalls of the gate trench and sidewalls of the resistor trench, depositing a gate electrode layer over the plurality of films and removing an upper portion of the gate electrode layer until the gate electrode layer is removed from the resistor trench.
公开/授权文献
- US20160086856A1 Metal Gate Structure and Method 公开/授权日：2016-03-24
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