Invention Grant
- Patent Title: Storage cell, storage device, and magnetic head
- Patent Title (中): 存储单元,存储设备和磁头
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Application No.: US14430065Application Date: 2013-08-22
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Publication No.: US09478731B2Publication Date: 2016-10-25
- Inventor: Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2012-217704 20120928
- International Application: PCT/JP2013/072389 WO 20130822
- International Announcement: WO2014/050380 WO 20140403
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; G11B5/39 ; H01L43/02 ; H01L27/22 ; G11C11/16

Abstract:
Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.
Public/Granted literature
- US20150249207A1 STORAGE CELL, STORAGE DEVICE, AND MAGNETIC HEAD Public/Granted day:2015-09-03
Information query
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