Invention Grant
US09481944B2 Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
有权
气体喷射器包括用于化学气相沉积（CVD）系统的漏斗形或楔形通道，以及具有相同的CVD系统
- Patent Title: Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
- Patent Title (中): 气体喷射器包括用于化学气相沉积（CVD）系统的漏斗形或楔形通道，以及具有相同的CVD系统
-
Application No.: US13828585Application Date: 2013-03-14
-
Publication No.: US09481944B2Publication Date: 2016-11-01
- Inventor: Chantal Arena , Ronald Thomas Bertram, Jr. , Ed Lindow , Christiaan Werkhoven
- Applicant: SOITEC
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: C30B25/14
- IPC: C30B25/14 ; C30B25/10 ; C30B29/40
Abstract:
The present invention provides improved gas injectors for use with CVD (chemical vapor deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high-volume manufacturing of GaN substrates.
Public/Granted literature
- US20130199441A1 GAS INJECTORS FOR CHEMICAL VAPOUR DEPOSITION (CVD) SYSTEMS AND CVD SYSTEMS WITH THE SAME Public/Granted day:2013-08-08
Information query
IPC分类:
