公开(公告)号：US09481944B2

公开(公告)日：2016-11-01

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14 ,  C30B25/10 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapor deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high-volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于高容量制造GaN衬底。

公开(公告)号：US20150099065A1

公开(公告)日：2015-04-09

申请号：US14401386

申请日：2013-05-24

Applicant: Soitec

Inventor： Claudio Canizares ,  Ronald Thomas Bertram, Jr.

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/45502 ,  C23C16/45514 ,  C23C16/45591 ,  C30B25/14 ,  C30B25/165 ,  C30B29/406

Abstract: Visor injectors include a gas injector port, internal sidewalls, and at least two ridges for directing gas flow through the visor injectors. Each of the ridges extends from a location proximate a hole in the gas injector port toward a gas outlet of the visor injector and is positioned between the internal sidewalls. Deposition systems include a base with divergently extending internal sidewalls, a gas injection port, a lid, and at least two divergently extending ridges for directing gas flow through a central region of a space at least partially defined by the internal sidewalls of the base and a bottom surface of the lid. Methods of forming a material on a substrate include flowing a precursor through such a visor injector and directing a portion of the precursor to flow through a central region of the visor injector with at least two ridges.

Abstract translation: 遮阳喷射器包括气体喷射器端口，内部侧壁和用于引导气体流过遮阳板喷射器的至少两个脊。 每个脊从靠近气体注射器端口中的孔的位置朝向面板喷射器的气体出口延伸并且位于内侧壁之间。 沉积系统包括具有分散延伸的内部侧壁的基部，气体注入端口，盖子和至少两个分开延伸的脊部，用于引导气体流动通过至少部分地由基部的内侧壁限定的空间的中心区域，以及 盖底面。 在基材上形成材料的方法包括使前体流过这种面板注射器，并引导一部分前体以至少两个脊流过面罩注射器的中心区域。

公开(公告)号：US08741385B2

公开(公告)日：2014-06-03

申请号：US13751558

申请日：2013-01-28

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow

IPC: C23C16/30

CPC classification number: H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract translation: 本发明涉及半导体处理领域，并且提供了通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的方法。 在优选的实施方案中，该方法提供热传递结构及其在CVD反应器内的布置，以便促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明提供放射吸收表面，其被放置以拦截来自加热灯的辐射并将其转移到流动的工艺气体。