公开(公告)号：US08741385B2

公开(公告)日：2014-06-03

申请号：US13751558

申请日：2013-01-28

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow

IPC: C23C16/30

CPC classification number: H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract translation: 本发明涉及半导体处理领域，并且提供了通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的方法。 在优选的实施方案中，该方法提供热传递结构及其在CVD反应器内的布置，以便促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明提供放射吸收表面，其被放置以拦截来自加热灯的辐射并将其转移到流动的工艺气体。

公开(公告)号：US09481944B2

公开(公告)日：2016-11-01

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, Jr. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14 ,  C30B25/10 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapor deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high-volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于高容量制造GaN衬底。

公开(公告)号：US20160145767A1

公开(公告)日：2016-05-26

申请号：US15013448

申请日：2016-02-02

Applicant: Soitec

Inventor： Ronald Thomas Bertram, JR. ,  Christiaan J. Werkhoven ,  Chantal Arena ,  Ed Lindow

IPC: C30B25/14 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B25/14 ,  C23C16/303 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/54 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T137/0402

Abstract: Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device.

公开(公告)号：US20130199441A1

公开(公告)日：2013-08-08

申请号：US13828585

申请日：2013-03-14

Applicant: SOITEC

Inventor： Chantal Arena ,  Ronald Thomas Bertram, JR. ,  Ed Lindow ,  Christiaan Werkhoven

IPC: C30B25/14

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates.

Abstract translation: 本发明提供了用于CVD（化学气相沉积）系统的改进的气体注入器，其在注入CVD腔室之前对气体进行热化。 所提供的喷射器构造成通过加热区增加气流时间，并且包括延长加热区中的气体驻留时间的导气导管。 所提供的注射器还具有尺寸，形状和布置成以选定的流动模式注入气体的出口端口。 本发明还提供了使用所提供的热化气体喷射器的CVD系统。 本发明特别适用于大量制造GaN衬底。

公开(公告)号：US09012919B2

公开(公告)日：2015-04-21

申请号：US13738406

申请日：2013-01-10

Applicant: SOITEC

Inventor： Ed Lindow ,  Chantal Arena ,  Ronald Bertram ,  Ranjan Datta ,  Subhash Mahajan

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/0262

Abstract: Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.

Abstract translation: 本发明的实施例涉及制造半导体结构的方法以及通过这些方法制造的半导体结构。 在一些实施例中，该方法可用于制造诸如InGaN的III-V材料的半导体结构。 通过使用不同的生长条件生长子层来制造半导体层，以改善所得层的均匀性，改善所得层的表面粗糙度和/或使层能够生长到增加的厚度而不发生 的应变松弛。

公开(公告)号：US20130137247A1

公开(公告)日：2013-05-30

申请号：US13751558

申请日：2013-01-28

Applicant: Soitec

Inventor： Chantal Arena ,  Christiaan J. Werkhoven ,  Ronald Thomas Bertram, JR. ,  Ed Lindow

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/303 ,  C23C16/448 ,  C30B25/105

Abstract: The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.

Abstract translation: 本发明涉及半导体处理领域，并且提供了通过在其反应之前促进前体气体的更有效的热化来改善半导体材料的化学气相沉积（CVD）的方法。 在优选的实施方案中，该方法提供热传递结构及其在CVD反应器内的布置，以便促进对流动的工艺气体的热传递。 在适用于对来自加热灯的辐射透明的CVD反应器的某些优选实施方案中，本发明提供放射吸收表面，其被放置以拦截来自加热灯的辐射并将其转移到流动的工艺气体。